2N5152 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5152
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 560 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO39
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2N5152 datasheet
2n5151 2n5152 2n5153 2n5154.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
2n5152 2n5154.pdf
2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec
2n5152 2n5152l 2n5154 2n5154l.pdf
NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/544 TO-5 Package 2N5152L, 2N5154L TO-39 (TO-205AD) Package 2N5152, 2N5154 Maximum Ratings (TC = +25 C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V
2n5152a.pdf
2N5152A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
Otros transistores... 2N5149 , 2N514A , 2N514B , 2N515 , 2N5150 , 2N5151 , 2N5151A , 2N5151S , 2N4401 , 2N5152S , 2N5152SM , 2N5153 , 2N5153-220M , 2N5153S , 2N5153SM , 2N5154 , 2N5154-220M .
History: ED1402B | ZTX758 | 2SB1046 | BC291 | 2SB120 | PT9734
History: ED1402B | ZTX758 | 2SB1046 | BC291 | 2SB120 | PT9734
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