2N5152 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5152
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 560 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
2N5152 Transistor Equivalent Substitute - Cross-Reference Search
2N5152 Datasheet (PDF)
2n5151 2n5152 2n5153 2n5154.pdf
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2n5152 2n5154.pdf
2N51522N5154MECHANICAL DATADimensions in mm (inches)HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec
2n5152 2n5152l 2n5154 2n5154l.pdf
NPN Power Silicon Transistor2N5152, 2N5152L & 2N5154, 2N5154LFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/544 TO-5 Package: 2N5152L, 2N5154LTO-39 (TO-205AD) Package: 2N5152, 2N5154Maximum Ratings (TC = +25C unless otherwise noted)Ratings Symbol Value UnitsCollector - Emitter Voltage VCEO 80 VdcCollector - Base V
2n5152a.pdf
2N5152ADimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n5152smd.pdf
2N5152SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n5152smd05.pdf
2N5152SMD052N5154SMD05MECHANICAL DATANPN BIPOLAR TRANSISTOR IN ADimensions in mm (inches)CERAMIC SURFACE MOUNTPACKAGE FOR HIGH-REL ANDSPACE APPLICATIONS DESCRIPTION !The 2N5152SMD05 and the 2N5154SMD05 aresilicon expitaxial planar NPN transistors in aCeramic S
2n5152u3.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154JANTX 2N5152L 2N5154LJANTXV 2N5152U3 2N5154U3JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC1879H | ECG128 | BUV21 | 2SD854
