ST41
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST41
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 45
V
Tensión colector-emisor (Vce): 35
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.025
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar ST41
ST41
Datasheet (PDF)
0.1. Size:44K fairchild semi
kst4123.pdf 
KST4123General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp
0.2. Size:44K fairchild semi
kst4124.pdf
KST4124General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp
0.3. Size:44K fairchild semi
kst4126.pdf
KST4126General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -25 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage
0.4. Size:45K fairchild semi
kst4125.pdf
KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage
0.5. Size:68K vishay
2n4117a pn4117a sst4117 2n4118a pn4118a sst4118 2n4119a pn4119a sst4119.pdf
2N/PN/SST4117A SeriesVishay SiliconixN-Channel JFETs2N4117A PN4117A SST41172N4118A PN4118A SST41182N4119A PN4119A SST4119PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)4117 -0.6 to -1.8 -40 70 304118 -1 to -3 -40 80 804119 -2 to -6 -40 100 200FEATURES BENEFITS APPLICATIONSD Ultra-Low Leakage: 0.2 pA D Insignificant Signal Loss/Error Vo
0.6. Size:74K diodes
mmst4124.pdf
MMST4124NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-323 Complementary PNP Type Available (MMST4126) Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Ampli
0.7. Size:118K diodes
mmst4126.pdf
MMST4126 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-323 Complementary NPN Type Available (MMST4124) C Dim Min Max Ideal for Medium Power Amplification and Switching A 0.25 0.40 Ultra-Small Surface Mount Package B CB 1.15 1.35 Lead Free/RoHS Compliant (Note 2) "Green" Device (Notes 3 and 4) C 2.00
0.8. Size:21K calogic
2n4117 2n4118 2n4119 pn4117 pn4118 pn4119 sst4117 sst4118 sst4119.pdf
N-Channel JFETGeneral Purpose AmplifierCORPORATION2N4117 2N4119 / 2N4117A 2N4119APN4117 PN4119 / PN4117A PN4119A / SST4117 SST4119FEATURESPIN CONFIGURATION Low Leakage Low CapacitanceABSOLUTE MAXIMUM RATINGSTO-92(T = 25oC unless otherwise noted)ATO-72Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Curre
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