ST9 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST9
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 15 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO5
Búsqueda de reemplazo de transistor bipolar ST9
ST9 Datasheet (PDF)
std901t st901t.pdf
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ST901TSTD901THigh voltage NPN Darlington transistor for ignition coilFeatures High voltage special Darlington structureTAB Very rugged bipolar technologyTAB High DC current gain31Application3DPAK21 High ruggedness electronic ignition for small TO-220enginesDescriptionThe device is a high voltage NPN transistor in Figure 1. Internal schematic
st93003.pdf
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ST93003High voltage fast-switching PNP power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed1Application23 Electronic ballast for fluorescent lightingSOT-32DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagram
kst92 kst93.pdf
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September 2009KST92/KST93PNP Epitaxial Silicon TransistorFeatures High Voltage Transistor High Current, Wide SOA 32SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage : KST92 -300 V : KST93 -200 VVCEO Collector-Emitter Voltage : KST92 -300 V : KST93 -200 V
kst92.pdf
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KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage : KST92 -300 V : KST93 -200 VVCEO Collector-Emitter Voltage : KST92 -300 V : KST93 -200 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mA
kst92.pdf
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KST92/93 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO :KST92 -300 V :KST93 -200 VCollector-Emitter Voltage VCEO :KST92 -300 V :KST93 -200 VEmitter-Base Voltage VEBO -5 VCollector Current IC -500 mACollector Dissipation PC 350 mWStorage Temperature TSTG 15
qst9.pdf
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QST9 Transistors General purpose amplification (-30V, -1A) QST9 External dimensions (Unit : mm) Application Low frequency amplifier Driver 2.81.6 Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV At IC = -500mA / IB = -25mA ROHM : TSMT6 Each lead has same dimensionsAbbreviated symbol : T09 Equivalent circui
kst9018.pdf
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SMD Type SMD Type Tra n s i s to rs ICSMD TypeNPN TransistorsKST9018SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Features High current gain bandwidth product. 1 2+0.1+0.05 power dissipation.(PC=200mW) 0.95 -0.1 0.1 -0.01 1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCol
kst9013c.pdf
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SMD Type ICSMD Type TransistorsSMD TypeNPN TransistorsKST9013CSOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13FeaturesExcellent hFE linearityCollector Current :IC=0.5A12+0.1+0.050.95-0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltag
kst9014-d.pdf
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SMD Type TransistorsSMD TypeNPN TransistorsKST9014-DSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.1A1 2+0.050.95+0.1-0.1 0.1 -0.01Complementary to KST9015-D1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-E
kst9015-d.pdf
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SMD Type TransistorsSMD TypePNP TransistorsKST9015-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesExcellent hFE linearityCollector Current :IC=-0.1A1 2Complementary to KST9014-D+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollect
kst9014.pdf
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SMD Type TransistorsSMD TypeNPN TransistorsKST9014SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.1A1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 45 VEmit
kst9012c.pdf
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SMD Type TransistorsSMD Type ICSMD TypePNP TransistorsKST9012CSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesExcellent hFE liearityCollector Current :IC=-0.5A 12+0.050.95+0.1-0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -40 VCollector - Emitter Voltag
kst9013.pdf
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SMD Type TransistICsSMD Type orSMD TypeNPN TransistorsKST9013SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.5A1 2+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltage
kst9015.pdf
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SMD Type TransistorsSMD TypePNP TransistorsKST9015SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesComplementary to KST90141 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -
kst9012.pdf
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SMD Type orSMD Type TransistICsSMD TypePNP TransistorsKST9012SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3Excellent hFE liearityCollector Current :IC=-0.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -40 VCollector - Emitter Vo
ost90n65hm2f.pdf
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OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost90n60hczf.pdf
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OST90N60HCZF Enhancement Mode N-Channel Power IGBT General Description OST90N60HCZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
st9435a.pdf
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ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note
st901t.pdf
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ST901THIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON HIGH VOLTAGE SPECIAL DARLINGTONSTRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE HIGH DC CURRENT GAINAPPLICATION HIGH RUGGEDNESS ELECTRONIC32IGNITION FOR SMALL ENGINES1DESCRIPTION TO-220The ST901T is a high voltage NPN silicontransistor in monolithic special Darlingtoncon
st9435gp.pdf
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ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power
cst9n20lf cst9n20lp.pdf
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CST9N20LF, CST9N20LPnvertSuzhou Convert Semiconductor Co ., Ltd.CST9N20LU CST9N20LD200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power (SMPS) Uninterruptible Power Supply (UPS)Device Marking and Package InformationDevice Package MarkingCST9N20LF TO-220F CST9N20LFCST9N20LP TO-220 C
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor900V Super Junction Power MOSFET Gen-SS*90R900S2Rev. 1.2May. 2022www.supersemi.com.cnSSF90R900S2/SSP90R900S2/SST90R900S2900V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
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