ST9 - описание и поиск аналогов

ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features High voltage special Darlington structure TAB Very rugged bipolar technology TAB High DC current gain 3 1 Application 3 DPAK 2 1 High ruggedness electronic ignition for small TO-220 engines Description The device is a high voltage NPN transistor in Figure 1. Internal schematic

ST93003 High voltage fast-switching PNP power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 1 Application 2 3 Electronic ballast for fluorescent lighting SOT-32 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram

September 2009 KST92/KST93 PNP Epitaxial Silicon Transistor Features High Voltage Transistor High Current, Wide SOA 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage KST92 -300 V KST93 -200 V VCEO Collector-Emitter Voltage KST92 -300 V KST93 -200 V

KST92/93 3 High Voltage Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage KST92 -300 V KST93 -200 V VCEO Collector-Emitter Voltage KST92 -300 V KST93 -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA

KST92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO KST92 -300 V KST93 -200 V Collector-Emitter Voltage VCEO KST92 -300 V KST93 -200 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 15

QST9 Transistors General purpose amplification (-30V, -1A) QST9 External dimensions (Unit mm) Application Low frequency amplifier Driver 2.8 1.6 Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) max. -350mV At IC = -500mA / IB = -25mA ROHM TSMT6 Each lead has same dimensions Abbreviated symbol T09 Equivalent circui

SMD Type SMD Type Tra n s i s to rs IC SMD Type NPN Transistors KST9018 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Features High current gain bandwidth product. 1 2 +0.1 +0.05 power dissipation.(PC=200mW) 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Col

SMD Type IC SMD Type Transistors SMD Type NPN Transistors KST9013C SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE linearity Collector Current IC=0.5A 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltag

SMD Type Transistors SMD Type NPN Transistors KST9014-D SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current IC=0.1A 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to KST9015-D 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-E

SMD Type Transistors SMD Type PNP Transistors KST9015-D SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE linearity Collector Current IC=-0.1A 1 2 Complementary to KST9014-D +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collect

SMD Type Transistors SMD Type NPN Transistors KST9014 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current IC=0.1A 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emit

SMD Type Transistors SMD Type IC SMD Type PNP Transistors KST9012C SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE liearity Collector Current IC=-0.5A 12 +0.05 0.95+0.1 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltag

SMD Type TransistICs SMD Type or SMD Type NPN Transistors KST9013 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Excellent hFE linearity Collector Current IC=0.5A 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage

SMD Type Transistors SMD Type PNP Transistors KST9015 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Complementary to KST9014 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -

SMD Type or SMD Type TransistICs SMD Type PNP Transistors KST9012 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Excellent hFE liearity Collector Current IC=-0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Vo

OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

OST90N60HCZF Enhancement Mode N-Channel Power IGBT General Description OST90N60HCZF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note

ST901T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE HIGH DC CURRENT GAIN APPLICATION HIGH RUGGEDNESS ELECTRONIC 3 2 IGNITION FOR SMALL ENGINES 1 DESCRIPTION TO-220 The ST901T is a high voltage NPN silicon transistor in monolithic special Darlington con

ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power

CST9N20LF, CST9N20LP nvert Suzhou Convert Semiconductor Co ., Ltd. CST9N20LU CST9N20LD 200V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power (SMPS) Uninterruptible Power Supply (UPS) Device Marking and Package Information Device Package Marking CST9N20LF TO-220F CST9N20LF CST9N20LP TO-220 C

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 900V Super Junction Power MOSFET Gen- SS*90R420S2 Rev. 1.2 Nov. 2022 www.supersemi.com.cn SSF90R420S2/SSP90R420S2/SST90R420S2 900V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizin

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 900V Super Junction Power MOSFET Gen- SS*90R900S2 Rev. 1.2 May. 2022 www.supersemi.com.cn SSF90R900S2/SSP90R900S2/SST90R900S2 900V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizin

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 900V Super Junction Power MOSFET Gen- SS*90R650S2 Rev. 1.2 Jul. 2022 www.supersemi.com.cn SSF90R650S2/SSP90R650S2/SST90R650S2 900V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizin

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 900V Super Junction Power MOSFET SS*90R1K5S Rev. 1.2 Aug. 2019 www.supersemi.com.cn September, 2013 SJ-FET SSF90R1K5S/SSP90R1K5S/SST90R1K5S/SSU90R1K5S 900V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizi