ST9 Datasheet and Replacement

ST901TSTD901THigh voltage NPN Darlington transistor for ignition coilFeatures High voltage special Darlington structureTAB Very rugged bipolar technologyTAB High DC current gain31Application3DPAK21 High ruggedness electronic ignition for small TO-220enginesDescriptionThe device is a high voltage NPN transistor in Figure 1. Internal schematic

ST93003High voltage fast-switching PNP power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed1Application23 Electronic ballast for fluorescent lightingSOT-32DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagram

September 2009KST92/KST93PNP Epitaxial Silicon TransistorFeatures High Voltage Transistor High Current, Wide SOA 32SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage : KST92 -300 V : KST93 -200 VVCEO Collector-Emitter Voltage : KST92 -300 V : KST93 -200 V

KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage : KST92 -300 V : KST93 -200 VVCEO Collector-Emitter Voltage : KST92 -300 V : KST93 -200 VVEBO Emitter-Base Voltage -5 VIC Collector Current -500 mA

KST92/93 PNP EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO :KST92 -300 V :KST93 -200 VCollector-Emitter Voltage VCEO :KST92 -300 V :KST93 -200 VEmitter-Base Voltage VEBO -5 VCollector Current IC -500 mACollector Dissipation PC 350 mWStorage Temperature TSTG 15

QST9 Transistors General purpose amplification (-30V, -1A) QST9 External dimensions (Unit : mm) Application Low frequency amplifier Driver 2.81.6 Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) : max. -350mV At IC = -500mA / IB = -25mA ROHM : TSMT6 Each lead has same dimensionsAbbreviated symbol : T09 Equivalent circui

SMD Type SMD Type Tra n s i s to rs ICSMD TypeNPN TransistorsKST9018SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Features High current gain bandwidth product. 1 2+0.1+0.05 power dissipation.(PC=200mW) 0.95 -0.1 0.1 -0.01 1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCol

SMD Type ICSMD Type TransistorsSMD TypeNPN TransistorsKST9013CSOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13FeaturesExcellent hFE linearityCollector Current :IC=0.5A12+0.1+0.050.95-0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltag

SMD Type TransistorsSMD TypeNPN TransistorsKST9014-DSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.1A1 2+0.050.95+0.1-0.1 0.1 -0.01Complementary to KST9015-D1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-E

SMD Type TransistorsSMD TypePNP TransistorsKST9015-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesExcellent hFE linearityCollector Current :IC=-0.1A1 2Complementary to KST9014-D+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollect

SMD Type TransistorsSMD TypeNPN TransistorsKST9014SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.1A1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 45 VEmit

SMD Type TransistorsSMD Type ICSMD TypePNP TransistorsKST9012CSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesExcellent hFE liearityCollector Current :IC=-0.5A 12+0.050.95+0.1-0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -40 VCollector - Emitter Voltag

SMD Type TransistICsSMD Type orSMD TypeNPN TransistorsKST9013SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesExcellent hFE linearityCollector Current :IC=0.5A1 2+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 40 VCollector - Emitter Voltage

SMD Type TransistorsSMD TypePNP TransistorsKST9015SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesComplementary to KST90141 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmitter-Base Voltage VEBO -

SMD Type orSMD Type TransistICsSMD TypePNP TransistorsKST9012SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3Excellent hFE liearityCollector Current :IC=-0.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -40 VCollector - Emitter Vo

OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

OST90N60HCZF Enhancement Mode N-Channel Power IGBT General Description OST90N60HCZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note

ST901THIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON HIGH VOLTAGE SPECIAL DARLINGTONSTRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE HIGH DC CURRENT GAINAPPLICATION HIGH RUGGEDNESS ELECTRONIC32IGNITION FOR SMALL ENGINES1DESCRIPTION TO-220The ST901T is a high voltage NPN silicontransistor in monolithic special Darlingtoncon

ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power

CST9N20LF, CST9N20LPnvertSuzhou Convert Semiconductor Co ., Ltd.CST9N20LU CST9N20LD200V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power (SMPS) Uninterruptible Power Supply (UPS)Device Marking and Package InformationDevice Package MarkingCST9N20LF TO-220F CST9N20LFCST9N20LP TO-220 C

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor900V Super Junction Power MOSFET Gen-SS*90R420S2Rev. 1.2Nov. 2022www.supersemi.com.cnSSF90R420S2/SSP90R420S2/SST90R420S2900V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor900V Super Junction Power MOSFET Gen-SS*90R900S2Rev. 1.2May. 2022www.supersemi.com.cnSSF90R900S2/SSP90R900S2/SST90R900S2900V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor900V Super Junction Power MOSFET Gen-SS*90R650S2Rev. 1.2Jul. 2022www.supersemi.com.cnSSF90R650S2/SSP90R650S2/SST90R650S2900V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor900V Super Junction Power MOSFETSS*90R1K5SRev. 1.2Aug. 2019www.supersemi.com.cnSeptember, 2013SJ-FETSSF90R1K5S/SSP90R1K5S/SST90R1K5S/SSU90R1K5S900V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizi