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T2016 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: T2016
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.045 W
   Tensión colector-base (Vcb): 10 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO9

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T2016 Datasheet (PDF)

 0.1. Size:109K  renesas
 rej03g1156 hat2016rds.pdf pdf_icon

T2016

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:1639K  cn vbsemi
 hat2016r.pdf pdf_icon

T2016

HAT2016R www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box

 0.3. Size:1056K  cn vbsemi
 hat2016rj.pdf pdf_icon

T2016

Otros transistores... T1904 , T1905 , T1937 , T1961 , T1967 , T1973 , T1992 , T2015 , SS8050 , T2017 , T2018 , T2019 , T2020 , T2021 , T2022 , T2023 , T2024 .

History: TN4140 | T2110

 

 
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