All Transistors. T2016 Datasheet

 

T2016 Datasheet and Replacement


   Type Designator: T2016
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.045 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO9

 T2016 Transistor Equivalent Substitute - Cross-Reference Search

   

T2016 Datasheet (PDF)

 0.1. Size:109K  renesas
 rej03g1156 hat2016rds.pdf pdf_icon

T2016

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 0.2. Size:1639K  cn vbsemi
 hat2016r.pdf pdf_icon

T2016

HAT2016R www.VBsemi.tw Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.022 at VGS = 10 V TrenchFET Power MOSFET 6.8 30 15 nC 100 % UIS Tested 0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box ... See More ⇒

 0.3. Size:1056K  cn vbsemi
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T2016

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Datasheet: T1904 , T1905 , T1937 , T1961 , T1967 , T1973 , T1992 , T2015 , SS8050 , T2017 , T2018 , T2019 , T2020 , T2021 , T2022 , T2023 , T2024 .

History: T1327 | T2030 | T2019 | T2357 | T1961 | BFS85 | T1832

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