TA1575 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1572 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability IC and ICP. B D Higher Efficiency Leading to Less Heat Generation. DIM MILLIMETERS A 7.20 MAX B 5.20 MAX C 0.60 MAX P D 2.50 MAX MAXIMUM RATING (Ta=25 ) DEPTH 0.2 E 1.15 MAX F 1.27 C CHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTOR KTA1571S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability IC and ICP. Higher Efficiency Leading to Less Heat Generation. E L B L DIM MILLIMETERS _ + A 2.93 0.20 MAXIMUM RATING (Ta=25 ) B 1.30+0.20/-0.15 C 1.30 MAX CHARACTERISTIC SYMBOL RATING UNIT 2 3 D 0.40+0.15/-0

Spec. No. C306S3 Issued Date 2002.05.11 Revised Date 2014.01.24 CYStech Electronics Corp. Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating

Spec. No. C307S3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date 2011.09.20 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O

SEMICONDUCTOR FTA1576 TECHNICAL DATA General Purpose Transistors PNP Silicon ORDERING INFORMATION 3 Shipping Device Package FTA1576AXLT1G SC-70 / SOT-323 3000/Tape & Reel 1 FTA1576AXLT3G SC-70 / SOT-323 10000/Tape & Reel 2 * X hFE Cassified SC-70 / SOT 323 MAXIMUM RATINGS 3 Rating Symbo Value Unit COLLECTOR Collector Emitter Voltage VCEO 50 V 1 Collector Base V