TA1575B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1572TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).High Collector Current Capability : IC and ICP.B DHigher Efficiency Leading to Less Heat Generation.DIM MILLIMETERSA 7.20 MAXB 5.20 MAXC 0.60 MAXPD 2.50 MAXMAXIMUM RATING (Ta=25 ) DEPTH:0.2E 1.15 MAXF 1.27CCHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTOR KTA1571STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORFEATURELow Collector-Emitter Saturation Voltage VCE(sat).High Collector Current Capability : IC and ICP.Higher Efficiency Leading to Less Heat Generation.EL B LDIM MILLIMETERS_+A 2.93 0.20MAXIMUM RATING (Ta=25)B 1.30+0.20/-0.15C 1.30 MAXCHARACTERISTIC SYMBOL RATING UNIT 23 D 0.40+0.15/-0

Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2014.01.24 CYStech Electronics Corp. Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating

Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2011.09.20 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O

SEMICONDUCTORFTA1576TECHNICAL DATAGeneral Purpose TransistorsPNP SiliconORDERING INFORMATION3ShippingDevice PackageFTA1576AXLT1G SC-70 / SOT-323 3000/Tape & Reel1FTA1576AXLT3G SC-70 / SOT-323 10000/Tape & Reel2* X : hFE CassifiedSC-70 / SOT 323 MAXIMUM RATINGS3Rating Symbo Value UnitCOLLECTORCollectorEmitter Voltage VCEO 50 V1CollectorBase V