TA1662 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1662 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTC4374. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTOR FTA1662 TECHNICAL DATA FEATURES A Complementary to FTC4374 C H G MAXIMUM RATINGS (TA=25 unless otherwise noted) D D Symbol Parameter Value Units K VCBO Collector-Base Voltage -80 V F F DIM MILLIMETERS A 4.70 MAX VCEO Collector-Emitter Voltage -80 V _ + B 2.50 0.20 C 1.70 MAX VEBO Emitter-Base Voltage -5 V 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX IC Colle

KTA1664-O MCC TM Micro Commercial Components KTA1664-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Collector Saturation Voltage PNP Silicon Execllent current-to-gain characteristics Epitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See orderi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1663 TRANSISTOR (PNP) 1. BASE FEATURES High current applications 2. COLLECTOR Complementary to KTC4375 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to KTC4379 Small Flat Package 3. EMITTER Low Saturation Voltage Power Amplifier and Switching Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Co

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1664 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to KTC4376 Small Flat Package 3. EMITTER High Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1668 TRANSISTOR(PNP) 1. BASE FEATURES High voltage VCEO=-60V 2. COLLECTOR High transistors frequency 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Em

SEMICONDUCTOR KTA1663 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTC4375. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G

SEMICONDUCTOR KTA1660 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES A C High Voltage VCEO=-150V. H High Transition Frequency fT=120MHz(Typ.). G 1W (Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTC4372. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ +

SEMICONDUCTOR KTA1666 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. A C FEATURES H Low Saturation Voltage G VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time tstg=1.0 S(Typ.) DIM MILLIMETERS PC=1 2W (Mounted on Ceramic Substrate) A 4.70 MAX D _ + D B 2.50 0.20 Small Flat Package. K C 1.70 MAX D 0.

SEMICONDUCTOR KTA1661 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C High Voltage VCEO=-120V. H High Transition Frequency fT=120MHz(Typ.). G 1W(Monunted on Ceramic Substrate). Small Flat Package. DIM MILLIMETERS Complementary to KTC4373. A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 F F E 4.25 MAX _ + F 1.50 0.10

SEMICONDUCTOR KTA1664 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES A C 1W (Mounted on Ceramic Substrate). H Small Flat Package. G Complementary to KTC4376. DIM MILLIMETERS A 4.70 MAX D _ + D B 2.50 0.20 K C 1.70 MAX D 0.45+0.15/-0.10 MAXIMUM RATING (Ta=25 ) F F E 4.25 MAX _ + F 1.50 0.10 CHARACTERISTIC SYMBOL RATING UNIT G 0.40

SEMICONDUCTOR KTA1668 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE A C FEATURES H High Voltage VCEO=-60V(Min.). G High Current IC(Max.)=-1A. High Transition Frequency fT=150MHz (Typ.). DIM MILLIMETERS Wide Area of Safe Operation. A 4.70 MAX D _ + D B 2.50 0.20 Complementary to KTC4378. K C 1.70 MAX D 0.45+0.15/-

KTA1663 TRANSISTOR (PNP) SOT-89 FEATURES High current applications 1. BASE Complementary to KTC4375 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Coll

KTA1666 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Complementary to KTC4379 Small Flat Package 2. COLLECTOR Low Saturation Voltage 3. EMITTER Power Amplifier and Switching Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V

KTA1664 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Complementary to KTC4376 Small Flat Package 2. COLLECTOR High Current Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA PC Collect

KTA1668 TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE High voltage VCEO=-60V High transistors frequency 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector power di

KTA1663 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-89 1 4.6 2 B 4.4 1.6 3. EMITTER 1.8 1.4 3 1.4 Features 2.6 4.25 2.4 3.75 High current applications 0.8 MIN Complementary to KTC4375 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Valu

KTA1668 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 Features 2.6 4.25 2.4 3.75 High voltage VCEO=-60V 0.8 High transistors frequency MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Symbol Parameter Value Units Dimensions in inches and (mill

KTA1663 PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -35 VCEO V Collector-Emitter Voltage -30 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -1.5 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150

KTA1666 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 1 2. COLLECTOR 2 3 3. EMITTER SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit VCBO -50 V Collector-Base Voltage VCEO -50 V Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage IC Collector Current-Continuous -2.0 A PC 0.5 W Collector Power Disspation Junction Temperature TJ 150 C -55 t

KTA166 PNP Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -35 VCEO V Collector-Emitter Voltage -30 VEBO V Emitter-Base Voltage -5.0 Collector Current IC A -0.8 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150

Spec. No. C315L3 Issued Date 2008.03.14 CYStech Electronics Corp. Revised Date 2011.09.06 Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTA1664L3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free lead plating and halogen-free package Symbol Outline BTA1664L3 SOT-223 C E B Base C C Collector B E Em

Spec. No. C315M3 Issued Date 2005.01.25 CYStech Electronics Corp. Revised Date 2014.02.14 Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTA1664M3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free lead plating and halogen-free package Symbol Outline BTA1664M3 SOT-89 B Base B C E C Collector E Emitte

SEMICONDUCTOR FTA1666 TECHNICAL DATA A C H G FTA1666 TRANSISTOR (PNP) D D K FEATURES F F DIM MILLIMETERS Complementary to FTC4379 A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX Small Flat Package 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX Low Saturation Voltage _ + F 1.50 0.10 G 0.40 TYP 1. BASE Power Amplifier and Switching Application H 1.7 MAX 2. COLLECTOR J 0.7 MIN

SEMICONDUCTOR FTA1661 TECHNICAL DATA A C H PNP Transistor G FEATURES D D K Small Flat Package F F DIM MILLIMETERS High Current Application A 4.70 MAX _ + B 2.50 0.20 High Voltage C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN 3. EMITTER K 0.5+0.15/-0.10 SOT-8

SEMICONDUCTOR FTA1664 TECHNICAL DATA A C H G FTA1664 TRANSISTOR (PNP) FEATURES D D K Complementary to FTC4376 F F DIM MILLIMETERS Small Flat Package A 4.70 MAX _ + B 2.50 0.20 High Current Application C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 E 4.25 MAX _ + F 1.50 0.10 G 0.40 TYP 1. BASE H 1.7 MAX 2. COLLECTOR J 0.7 MIN 3. EMITTER K 0.5+0.15/-0.10 SOT-89 MAX

SEMICONDUCTOR FTA1663 TECHNICAL DATA PNP Transistor A FEATURES C H High current applications G Complementary to FTC4375 D D MAXIMUM RATINGS (TA=25 unless otherwise noted) K F F DIM MILLIMETERS Symbol Parameter Value Units A 4.70 MAX _ + B 2.50 0.20 VCBO Collector-Base Voltage -30 V C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 VCEO Collector-Emitter Voltage -30 V E 4.25 MAX

SMD Type Transistors PNP Transistors KTA1663 1.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Comlementary to KTC4375 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -

SMD Type Transistors PNP Transistors KTA1660 1.70 0.1 Features High Voltage High Transition Frequency Complementary to KTC4372 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collect

SMD Type Transistors PNP Transistors KTA1666 1.70 0.1 Features Small Flat Package Low Saturation Voltage 0.42 0.1 0.46 0.1 Power Amplifier and Switching Application Comlementary to KTC4379 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

SMD Type Transistors PNP Transistors KTA1661 1.70 0.1 Features High Voltage High Transition Frequency Small Flat Package 0.42 0.1 0.46 0.1 Complementary to KTC4373 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base

SMD Type Transistors PNP Transistors KTA1664 1.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package 0.42 0.1 0.46 0.1 Comlementary to KTC4376 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -

SMD Type Transistors PNP Transistors KTA1668 1.70 0.1 Features High Voltage VCEO=-60V(Min.). High Current IC(Max.)=-1A. High Transition Frequency 0.42 0.1 0.46 0.1 Complementary to KTC4378. 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage

KTA1663 PNP-Silicon General use Transistors 0.8W 1.5A 25V 4 Applications Can be used for switching and amplifying in various 2 1 3 SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 30 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Col

KTA1661 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to KTC4373 High Transition Frequency High Current Application High Voltage Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted