TA1662 Datasheet and Replacement

SEMICONDUCTOR KTA1662TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTC4374.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25)F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTORFTA1662TECHNICAL DATAFEATURES AComplementary to FTC4374 CHGMAXIMUM RATINGS (TA=25 unless otherwise noted) DDSymbol Parameter Value UnitsKVCBO Collector-Base Voltage -80 V F FDIM MILLIMETERSA 4.70 MAXVCEO Collector-Emitter Voltage -80 V _+B 2.50 0.20C 1.70 MAXVEBO Emitter-Base Voltage -5 V 1 2 3D 0.45+0.15/-0.10E 4.25 MAXIC Colle

KTA1664-OMCCTMMicro Commercial ComponentsKTA1664-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Collector Saturation VoltagePNP Silicon Execllent current-to-gain characteristicsEpitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See orderi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1663 TRANSISTOR (PNP) 1. BASE FEATURES High current applications 2. COLLECTOR Complementary to KTC4375 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to KTC4379 Small Flat Package3. EMITTER Low Saturation Voltage Power Amplifier and Switching Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Co

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1664 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to KTC4376 Small Flat Package3. EMITTER High Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L KTA1668 TRANSISTOR(PNP)1. BASEFEATURES High voltage: VCEO=-60V2. COLLECTOR High transistors frequency3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Em

SEMICONDUCTOR KTA1663TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTC4375.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25)F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG

SEMICONDUCTOR KTA1660TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.FEATURES ACHigh Voltage : VCEO=-150V.HHigh Transition Frequency : fT=120MHz(Typ.).G1W (Monunted on Ceramic Substrate).Small Flat Package.DIM MILLIMETERSComplementary to KTC4372.A 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10F FE 4.25 MAX_+

SEMICONDUCTOR KTA1666TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. ACFEATURESH Low Saturation Voltage G: VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1.0 S(Typ.)DIM MILLIMETERS PC=1 2W (Mounted on Ceramic Substrate)A 4.70 MAXD _+D B 2.50 0.20 Small Flat Package.K C 1.70 MAXD 0.

SEMICONDUCTOR KTA1661TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION.FEATURESACHigh Voltage : VCEO=-120V.HHigh Transition Frequency : fT=120MHz(Typ.).G1W(Monunted on Ceramic Substrate).Small Flat Package.DIM MILLIMETERSComplementary to KTC4373.A 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10F FE 4.25 MAX_+F 1.50 0.10

SEMICONDUCTOR KTA1664TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURESAC 1W (Mounted on Ceramic Substrate).H Small Flat Package. G Complementary to KTC4376.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25 )F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG 0.40

SEMICONDUCTOR KTA1668TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEACFEATURESHHigh Voltage : VCEO=-60V(Min.). GHigh Current : IC(Max.)=-1A.High Transition Frequency : fT=150MHz (Typ.).DIM MILLIMETERSWide Area of Safe Operation.A 4.70 MAXD _+D B 2.50 0.20Complementary to KTC4378.K C 1.70 MAXD 0.45+0.15/-

KTA1663TRANSISTOR (PNP) SOT-89 FEATURES High current applications 1. BASE Complementary to KTC4375 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Coll

KTA1666TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Complementary to KTC4379 Small Flat Package2. COLLECTOR Low Saturation Voltage 3. EMITTER Power Amplifier and Switching Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V

KTA1664TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Complementary to KTC4376 Small Flat Package2. COLLECTOR High Current Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA PC Collect

KTA1668TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE High voltage: VCEO=-60V High transistors frequency 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector power di

KTA1663 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR SOT-891 4.62 B4.41.63. EMITTER 1.81.43 1.4Features2.64.252.43.75 High current applications 0.8MIN Complementary to KTC4375 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Valu

KTA1668 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR 1 SOT-892 4.6B4.43. EMITTER 1.63 1.81.41.4Features2.64.252.43.75 High voltage: VCEO=-60V 0.8 High transistors frequency MIN0.530.400.480.44 2x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Symbol Parameter Value UnitsDimensions in inches and (mill

KTA1663PNP Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-35VCEOVCollector-Emitter Voltage -30VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-1.5Collector Power Dissipation PD 0.5 WTjJunction Temperature -55 to +150

KTA1666PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE12. COLLECTOR233. EMITTERSOT-89ABSOLUTE MAXIMUM RATINGS(TaRating Symbol Value UnitVCBO-50 VCollector-Base VoltageVCEO-50 VCollector-Emitter VoltageVVEBO -5Emitter-Base VoltageICCollector Current-Continuous -2.0 APC0.5 WCollector Power DisspationJunction Temperature TJ 150 C-55 t

KTA166 PNP Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-35VCEOVCollector-Emitter Voltage -30VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-0.8Collector Power Dissipation PD 0.5 WTjJunction Temperature -55 to +150

Spec. No. : C315L3 Issued Date : 2008.03.14 CYStech Electronics Corp.Revised Date :2011.09.06 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTA1664L3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free lead plating and halogen-free package Symbol Outline BTA1664L3SOT-223 CEBBase CCCollector BEEm

Spec. No. : C315M3 Issued Date : 2005.01.25 CYStech Electronics Corp.Revised Date : 2014.02.14 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTA1664M3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free lead plating and halogen-free package Symbol Outline BTA1664M3 SOT-89 BBase B C E CCollector EEmitte

KTA1666 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , KTC4379Low saturation voltage, high speed switching time, small flat package, Complementary to KTC4379. / Applications

SEMICONDUCTORFTA1666TECHNICAL DATAACHGFTA1666 TRANSISTOR (PNP) D DKFEATURES F FDIM MILLIMETERS Complementary to FTC4379 A 4.70 MAX_+B 2.50 0.20C 1.70 MAX Small Flat Package 1 2 3D 0.45+0.15/-0.10E 4.25 MAX Low Saturation Voltage _+F 1.50 0.10G 0.40 TYP1. BASE Power Amplifier and Switching Application H 1.7 MAX2. COLLECTORJ 0.7 MIN

SEMICONDUCTORFTA1661TECHNICAL DATAACHPNP TransistorGFEATURES DDK Small Flat Package F FDIM MILLIMETERS High Current Application A 4.70 MAX_+B 2.50 0.20 High Voltage C 1.70 MAX1 2 3D 0.45+0.15/-0.10 High Transition Frequency E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-8

SEMICONDUCTORFTA1664TECHNICAL DATAACHGFTA1664 TRANSISTOR (PNP) FEATURES DDK Complementary to FTC4376 F FDIM MILLIMETERS Small Flat Package A 4.70 MAX_+B 2.50 0.20 High Current Application C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MAX2. COLLECTORJ 0.7 MIN3. EMITTERK 0.5+0.15/-0.10SOT-89MAX

SEMICONDUCTORFTA1663TECHNICAL DATAPNP TransistorAFEATURES CH High current applications G Complementary to FTC4375 DDMAXIMUM RATINGS (TA=25 unless otherwise noted)KF FDIM MILLIMETERSSymbol Parameter Value UnitsA 4.70 MAX_+B 2.50 0.20VCBO Collector-Base Voltage -30 V C 1.70 MAX1 2 3D 0.45+0.15/-0.10VCEO Collector-Emitter Voltage -30 V E 4.25 MAX

SMD Type TransistorsPNP TransistorsKTA16631.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Comlementary to KTC43750.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -

SMD Type TransistorsPNP TransistorsKTA16601.70 0.1 Features High Voltage High Transition Frequency Complementary to KTC43720.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collect

SMD Type TransistorsPNP TransistorsKTA16661.70 0.1 Features Small Flat Package Low Saturation Voltage0.42 0.10.46 0.1 Power Amplifier and Switching Application Comlementary to KTC43791.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO

SMD Type TransistorsPNP TransistorsKTA16611.70 0.1 Features High Voltage High Transition Frequency Small Flat Package0.42 0.10.46 0.1 Complementary to KTC43731.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base

SMD Type TransistorsPNP TransistorsKTA16641.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package0.42 0.10.46 0.1 Comlementary to KTC43761.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -

SMD Type TransistorsPNP TransistorsKTA16681.70 0.1 Features High Voltage : VCEO=-60V(Min.). High Current : IC(Max.)=-1A. High Transition Frequency0.42 0.10.46 0.1 Complementary to KTC4378.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage

KTA1663PNP-Silicon General use Transistors0.8W 1.5A25V 4 ApplicationsCan be used for switching and amplifying in various 2 1 3SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 30 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACol

KTA1661BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to KTC4373 High Transition Frequency High Current Application High Voltage Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted