TA1697 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new Bi

2STA1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Applications 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f

SEMICONDUCTOR KTA1695 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO AND GRNERAL PURPOSE APPLICATION. A Q B K FEATURES Recommended for 60W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to KTC4468. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0+0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYM