TA1697 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TA1697
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.12 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 14 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO1
Búsqueda de reemplazo de transistor bipolar TA1697
TA1697 Datasheet (PDF)
2sta1694.pdf
2STA1694High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new Bi
2sta1695.pdf
2STA1695High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC32Applications1 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f
kta1695.pdf
SEMICONDUCTOR KTA1695TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO AND GRNERAL PURPOSE APPLICATION.A Q BKFEATURES Recommended for 60W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to KTC4468.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0+0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25)G 3.3 MAXdH 9.0CHARACTERISTIC SYM
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
