TA1697 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TA1697  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.12 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 14 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO1

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TA1697 datasheet

 9.1. Size:142K  st
 2sta1694.pdf pdf_icon

TA1697

2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new Bi

 9.2. Size:167K  st
 2sta1695.pdf pdf_icon

TA1697

2STA1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Applications 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f

 9.3. Size:426K  kec
 kta1695.pdf pdf_icon

TA1697

SEMICONDUCTOR KTA1695 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO AND GRNERAL PURPOSE APPLICATION. A Q B K FEATURES Recommended for 60W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to KTC4468. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0+0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYM

Otros transistores... TA1650A, TA1655B, TA1658, TA1659, TA1660, TA1662, TA1682, TA1682A, BC546, TA1703B, TA1704, TA1705, TA1706, TA1730, TA1731, TA1755, TA1756