TA1697 Datasheet. Specs and Replacement
Type Designator: TA1697 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 14 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO1
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TA1697 datasheet
2STA1694 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-3P Audio power amplifier Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new Bi... See More ⇒
2STA1695 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC 3 2 Applications 1 Audio power amplifier TO-3P Description Figure 1. Internal schematic diagram The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f... See More ⇒
SEMICONDUCTOR KTA1695 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO AND GRNERAL PURPOSE APPLICATION. A Q B K FEATURES Recommended for 60W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to KTC4468. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0+0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYM... See More ⇒
Detailed specifications: TA1650A, TA1655B, TA1658, TA1659, TA1660, TA1662, TA1682, TA1682A, BC546, TA1703B, TA1704, TA1705, TA1706, TA1730, TA1731, TA1755, TA1756
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History: PBSS4160T
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