TA1697 Datasheet, Equivalent, Cross Reference Search

2STA1694High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new Bi

2STA1695High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -140 V Complementary to 2STC4468 Typical ft = 20 MHz Fully characterized at 125 oC32Applications1 Audio power amplifierTO-3PDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor f

SEMICONDUCTOR KTA1695TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO AND GRNERAL PURPOSE APPLICATION.A Q BKFEATURES Recommended for 60W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to KTC4468.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0+0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25)G 3.3 MAXdH 9.0CHARACTERISTIC SYM