TD162-1 Todos los transistores

 

TD162-1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TD162-1
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 90 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO3
 

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TD162-1 Datasheet (PDF)

 9.1. Size:50K  kec
 ktd1624.pdf pdf_icon

TD162-1

SEMICONDUCTOR KTD1624TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACFEATURESHAdoption of MBIT processes.GLow collector-to-emitter saturation voltage.Fast switching speed.DIM MILLIMETERSLarge current capacity and wide ASO.A 4.70 MAXD _+D B 2.50 0.20Complementary to KTB1124.K C 1.7

 9.2. Size:1380K  blue-rocket-elect
 ktd1624.pdf pdf_icon

TD162-1

KTD1624 Rev.G Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features MBIT -, KTB1124Adoption of MBIT processes, low collector-t

 9.3. Size:1562K  first silicon
 ftd1624.pdf pdf_icon

TD162-1

SEMICONDUCTORFTD1624TECHNICAL DATAVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACHGFEATURESAdoption of MBIT processes.Low collector-to-emitter saturation voltage.Fast switching speed. DDKLarge current capacity and wide ASO.F FDIM MILLIMETERSComplementary to FTB1124.A 4.70 MAX_+B 2.50 0.20C 1.70 MAXMAXIMUM RATING (Ta=25 )1

Otros transistores... TD13004D , TD13004DSMD , TD13004SMD , TD13005 , TD13005D , TD13005DSMD , TD13005SMD , TD162 , TIP32C , TD162A , TD162B , TD162C , TD163 , TD163-1 , TD163A , TD163B , TD163C .

History: DTC115TS3 | BCW60FN | 2SD5041Q | GFT21-30 | BC807-40WT1G

 

 
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