TD162-1
Datasheet, Equivalent, Cross Reference Search
Type Designator: TD162-1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 8
A
Max. Operating Junction Temperature (Tj): 200
°C
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
Package:
TO3
TD162-1
Transistor Equivalent Substitute - Cross-Reference Search
TD162-1
Datasheet (PDF)
9.1. Size:50K kec
ktd1624.pdf 
SEMICONDUCTOR KTD1624TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACFEATURESHAdoption of MBIT processes.GLow collector-to-emitter saturation voltage.Fast switching speed.DIM MILLIMETERSLarge current capacity and wide ASO.A 4.70 MAXD _+D B 2.50 0.20Complementary to KTB1124.K C 1.7
9.2. Size:1380K blue-rocket-elect
ktd1624.pdf
KTD1624 Rev.G Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features MBIT -, KTB1124Adoption of MBIT processes, low collector-t
9.3. Size:1562K first silicon
ftd1624.pdf
SEMICONDUCTORFTD1624TECHNICAL DATAVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTACHGFEATURESAdoption of MBIT processes.Low collector-to-emitter saturation voltage.Fast switching speed. DDKLarge current capacity and wide ASO.F FDIM MILLIMETERSComplementary to FTB1124.A 4.70 MAX_+B 2.50 0.20C 1.70 MAXMAXIMUM RATING (Ta=25 )1
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
