2N5240 Todos los transistores

 

2N5240 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5240

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 375 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Capacitancia de salida (Cc): 150 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO3

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2N5240 datasheet

 ..1. Size:168K  aeroflex
2n5240.pdf pdf_icon

2N5240

NPN Power Silicon Transistor 2N5240 Features High Voltage Vceo(sus) = 300 V (min) Wide Area of Safe Operation Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. TO-3 (TO-204AA) Package Maximum Ratings (TA = 25 C) Ratings Symbol Value Units Collector - Base Voltage VCBO

 ..2. Size:39K  inchange semiconductor
2n5240.pdf pdf_icon

2N5240

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION High Voltage- VCEO(SUS)= 300V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL

 9.1. Size:26K  fairchild semi
2n5246.pdf pdf_icon

2N5240

2N5246 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So

 9.2. Size:26K  fairchild semi
2n5245.pdf pdf_icon

2N5240

2N5245 N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-So

Otros transistores... 2N5234 , 2N5235 , 2N5236 , 2N5237 , 2N5238 , 2N5239 , 2N523A , 2N524 , S9013 , 2N5241 , 2N5242 , 2N5243 , 2N5244 , 2N5249 , 2N5249A , 2N524A , 2N525 .

 

 

 

 

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