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2N5240 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5240
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 375 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3
 

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2N5240 Datasheet (PDF)

 ..1. Size:168K  aeroflex
2n5240.pdf pdf_icon

2N5240

NPN Power Silicon Transistor2N5240Features High Voltage: Vceo(sus) = 300 V (min) Wide Area of Safe Operation Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switchingregulators, and high-voltage bridge amplifiers. TO-3 (TO-204AA) PackageMaximum Ratings (TA = 25 C) Ratings Symbol Value UnitsCollector - Base Voltage VCBO

 ..2. Size:39K  inchange semiconductor
2n5240.pdf pdf_icon

2N5240

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION High Voltage- : VCEO(SUS)= 300V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

 9.1. Size:26K  fairchild semi
2n5246.pdf pdf_icon

2N5240

2N5246N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So

 9.2. Size:26K  fairchild semi
2n5245.pdf pdf_icon

2N5240

2N5245N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So

Otros transistores... 2N5234 , 2N5235 , 2N5236 , 2N5237 , 2N5238 , 2N5239 , 2N523A , 2N524 , 2SB817 , 2N5241 , 2N5242 , 2N5243 , 2N5244 , 2N5249 , 2N5249A , 2N524A , 2N525 .

History: 2N1416 | DTL3405

 

 
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