Справочник транзисторов. 2N5240

 

Биполярный транзистор 2N5240 Даташит. Аналоги


   Наименование производителя: 2N5240
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 100 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 375 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 5 MHz
   Ёмкость коллекторного перехода (Cc): 150 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO3
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2N5240 Datasheet (PDF)

 ..1. Size:168K  aeroflex
2n5240.pdfpdf_icon

2N5240

NPN Power Silicon Transistor2N5240Features High Voltage: Vceo(sus) = 300 V (min) Wide Area of Safe Operation Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switchingregulators, and high-voltage bridge amplifiers. TO-3 (TO-204AA) PackageMaximum Ratings (TA = 25 C) Ratings Symbol Value UnitsCollector - Base Voltage VCBO

 ..2. Size:39K  inchange semiconductor
2n5240.pdfpdf_icon

2N5240

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5240 DESCRIPTION High Voltage- : VCEO(SUS)= 300V(Min) Wide Area of Safe Operation APPLICATIONS Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

 9.1. Size:26K  fairchild semi
2n5246.pdfpdf_icon

2N5240

2N5246N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So

 9.2. Size:26K  fairchild semi
2n5245.pdfpdf_icon

2N5240

2N5245N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from process 90.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-So

Другие транзисторы... 2N5234 , 2N5235 , 2N5236 , 2N5237 , 2N5238 , 2N5239 , 2N523A , 2N524 , 8550 , 2N5241 , 2N5242 , 2N5243 , 2N5244 , 2N5249 , 2N5249A , 2N524A , 2N525 .

History: 2N1416 | 2SA1327O | BC183CP | BC183K | NB113FI | 2N5606 | ME0401

 

 
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