TIP125 Datasheet. Equivalente

 ..1. Size:53K  st
 tip120 tip121 tip122 tip125 tip126 tip127 .pdf

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complement

 ..2. Size:45K  fairchild semi
 tip125.pdf

TIP125/126/127 Medium Power Linear Switching Applications Complementary to TIP120/121/122 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage TIP125 - 60 V TIP126 - 80 V TIP127 - 100 V B Collector-Emitter Voltag

 ..3. Size:55K  samsung
 tip125.pdf

PNP EPITAXIAL TIP125/126/127 DARLINGTON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V TIP125 -80 V TIP126 -120 V TIP127 Collector Emitter Voltage TIP125 VCEO -60 V TIP126 -80 V TIP127 -120 V 1.Base 2.Collector 3.Emitter

 ..4. Size:219K  mcc
 tip125 tip126 tip127.pdf

MCC Micro Commercial Components TM TIP125/126/127 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Silicon PNP The complementary NPN types are the TIP121/2/3 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy mee

 ..5. Size:2979K  jiangsu
 tip120 tip121 tip122 tip125 tip126 tip127.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASE Medium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1

 ..6. Size:688K  kexin
 tip125.pdf

DIP Type Transistors PNP Darlington Transistors TIP125 (KIP125) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54

 ..7. Size:213K  inchange semiconductor
 tip125.pdf

isc Silicon PNP Darlington Power Transistor TIP125 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP120 Minimum Lot-to-Lot variations for robust device performance and re

 9.1. Size:251K  motorola
 tip120re.pdf

Order this document MOTOROLA by TIP120/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power NPN TIP120* Complementary Silicon Transistors . . . designed for general purpose amplifier and low speed switching applications. TIP121* High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc TIP122* VCEO(sus) = 60 Vdc (Min)

 9.2. Size:270K  st
 tip122fp tip127fp.pdf

TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully 3 2 molded isolated package. It is intented for use in 1 pow

 9.3. Size:45K  fairchild semi
 tip122.pdf

TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25 C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage TIP120 60 V TIP121 80 V B TIP122 100 V VCEO Collector-Emitter Voltage

 9.4. Size:44K  fairchild semi
 tip121.pdf

TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25 C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage TIP120 60 V TIP121 80 V B TIP122 100 V VCEO Collector-Emitter Voltage

 9.5. Size:53K  samsung
 tip120.pdf

NPN EPITAXIAL TIP120/121/122 DARLINGTON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V TIP120 80 V TIP121 100 V TIP122 Collector-Emitter Voltage VCEO TIP120 60 V TIP121 80 V TIP122 VEBO 100 V 1.Base 2.Collector 3.Em

 9.6. Size:408K  mcc
 tip122.pdf

MCC TM Micro Commercial Components TIP122 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Darlington configuration in Jedec TO-220 package Transistors The complementary PNP types

 9.7. Size:521K  mcc
 tip120 to-220.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth TIP120 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector-emitter saturation voltage NPN Epitaxial Amplifier applications-emitter shunt resistors TO-220 compact package Darlington Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix de

 9.8. Size:21K  utc
 tip122.pdf

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65

 9.9. Size:21K  utc
 tip127.pdf

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65

 9.10. Size:66K  texas
 tip120 tip121 tip122.pdf

IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related s

 9.11. Size:94K  cdil
 tip122f 127f.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FP B C E Designed for General-Purpose Amplifier and Low-Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 100 V Collector -Emitter Voltage V

 9.12. Size:315K  cdil
 tip120-127.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 NPN PNP TO-220 Plastic Package High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION TIP120/125 TIP121/126 TIP122/127 UNIT VCEO Collector Emitter Vol

 9.13. Size:1163K  jiangsu
 tip127f.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 1.BASE TIP127F DARLINGTON TRANSISTOR (PNP) 2.COLLECTOR 3.EMITTER FEATURES 1 2 3 C PNP B Medium Power Complementary Silicon Transistors R 1 R 2 E typ. =5 K typ. =210 R1 R2 TIP127F=Device code Solid dot=Green moldinn compound device, if none,the norm

 9.14. Size:527K  jiangsu
 tip122 tip127.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTER FEATURES 2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d

 9.15. Size:70K  kec
 tip122.pdf

SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=100V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50 L

 9.16. Size:70K  kec
 tip127.pdf

SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=-120V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50

 9.17. Size:231K  lge
 tip120 tip127.pdf

TIP120-TIP127 TO-220 Darlington Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1

 9.18. Size:737K  wietron
 tip120-21-22-25-26-27.pdf

TIP120 Series PNP/NPN Silicon Power Transistor P b Lead(Pb)-Free 1 2 FEATURES 3 * Medium Power Complementary silicon transistors 1. BASE 2. COLLECTOR * TIP120,121,122 Darlington TRANSISTOR (NPN) 3. EMITTER * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220 MAXIMUM RATINGS (TA=25 unless otherwise noted) TIP122 TIP120 TIP121 Parameter Symbol Units TIP125 TIP126 TIP127

 9.19. Size:50K  hsmc
 htip127.pdf

Spec. No. HE6713 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temper

 9.20. Size:48K  hsmc
 htip122.pdf

Spec. No. HE6712 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temper

 9.21. Size:671K  jilin sino
 tip122 tip127.pdf

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

 9.22. Size:442K  blue-rocket-elect
 tip122l.pdf

TIP122L(BR3DA122LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features TIP127L(BR3CA127LQ) Complement to TIP127L(BR3CA127LQ). / Applications Medium power linear switching applications. / E

 9.23. Size:378K  blue-rocket-elect
 tip127l.pdf

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features TIP122L(BR3DA122LQ) Complement to TIP122L(BR3DA122LQ). / Applications Medium power linear switching applications. / E

 9.24. Size:515K  semtech
 sttip122.pdf

ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 5 A Collector Current IC 8 A Collector Current (Pulse) ICP 0.12 A Base Current IB

 9.25. Size:102K  first silicon
 tip122-tip127 to220.pdf

TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

 9.26. Size:1358K  kexin
 tip122.pdf

DIP Type Transistors NPN Darlington Transistors TIP122 (KIP122) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=100V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0

 9.27. Size:690K  kexin
 tip126.pdf

DIP Type Transistors PNP Darlington Transistors TIP126 (KIP126) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-80V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54

 9.28. Size:689K  kexin
 tip127.pdf

DIP Type Transistors PNP Darlington Transistors TIP127 (KIP127) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54

 9.29. Size:674K  kexin
 tip120.pdf

DIP Type Transistors NPN Darlington Transistors TIP120 (KIP120) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60 V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0

 9.30. Size:675K  kexin
 tip121.pdf

DIP Type Transistors NPN Darlington Transistors TIP121 (KIP121) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80 V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0

 9.31. Size:260K  lzg
 tip127f 3ca127f.pdf

TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP122F(3DA122F) Features Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

 9.32. Size:567K  lzg
 tip122 3da122.pdf

TIP122(3DA122) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP127(3CA127) Features Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I

 9.33. Size:212K  lzg
 tip127 3ca127.pdf

TIP127(3CA127) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP122(3DA122) Features Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

 9.34. Size:213K  inchange semiconductor
 tip122.pdf

isc Silicon NPN Darlington Power Transistor TIP122 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127 Minimum Lot-to-Lot variations for robust device performance and reliabl

 9.35. Size:213K  inchange semiconductor
 tip126.pdf

isc Silicon PNP Darlington Power Transistor TIP126 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP121 Minimum Lot-to-Lot variations for robust device performance and re

 9.36. Size:213K  inchange semiconductor
 tip127.pdf

isc Silicon PNP Darlington Power Transistor TIP127 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122 Minimum Lot-to-Lot variations for robust device performance and r

 9.37. Size:217K  inchange semiconductor
 tip122fp.pdf

isc Silicon NPN Darlington Power Transistor TIP122FP DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127FP Minimum Lot-to-Lot variations for robust device performance and rel

 9.38. Size:213K  inchange semiconductor
 tip120.pdf

isc Silicon NPN Darlington Power Transistor TIP120 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP125 Minimum Lot-to-Lot variations for robust device performance and reliable

 9.39. Size:229K  inchange semiconductor
 tip127b.pdf

isc Silicon PNP Darlington Power Transistor TIP127B DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122B Minimum Lot-to-Lot variations for robust device performance and

 9.40. Size:213K  inchange semiconductor
 tip121.pdf

isc Silicon NPN Darlington Power Transistor TIP121 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP126 Minimum Lot-to-Lot variations for robust device performance and reliable