TIP125 Datasheet and Replacement

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complement... See More ⇒

TIP125/126/127 Medium Power Linear Switching Applications Complementary to TIP120/121/122 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage TIP125 - 60 V TIP126 - 80 V TIP127 - 100 V B Collector-Emitter Voltag... See More ⇒

PNP EPITAXIAL TIP125/126/127 DARLINGTON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V TIP125 -80 V TIP126 -120 V TIP127 Collector Emitter Voltage TIP125 VCEO -60 V TIP126 -80 V TIP127 -120 V 1.Base 2.Collector 3.Emitter ... See More ⇒

MCC Micro Commercial Components TM TIP125/126/127 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Silicon PNP The complementary NPN types are the TIP121/2/3 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy mee... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASE Medium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1... See More ⇒

DIP Type Transistors PNP Darlington Transistors TIP125 (KIP125) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 ... See More ⇒

isc Silicon PNP Darlington Power Transistor TIP125 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP120 Minimum Lot-to-Lot variations for robust device performance and re... See More ⇒

Order this document MOTOROLA by TIP120/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power NPN TIP120* Complementary Silicon Transistors . . . designed for general purpose amplifier and low speed switching applications. TIP121* High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc TIP122* VCEO(sus) = 60 Vdc (Min)... See More ⇒

TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully 3 2 molded isolated package. It is intented for use in 1 pow... See More ⇒

TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25 C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage TIP120 60 V TIP121 80 V B TIP122 100 V VCEO Collector-Emitter Voltage ... See More ⇒

TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25 C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage TIP120 60 V TIP121 80 V B TIP122 100 V VCEO Collector-Emitter Voltage ... See More ⇒

NPN EPITAXIAL TIP120/121/122 DARLINGTON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V TIP120 80 V TIP121 100 V TIP122 Collector-Emitter Voltage VCEO TIP120 60 V TIP121 80 V TIP122 VEBO 100 V 1.Base 2.Collector 3.Em... See More ⇒

MCC TM Micro Commercial Components TIP122 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Darlington configuration in Jedec TO-220 package Transistors The complementary PNP types... See More ⇒

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth TIP120 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector-emitter saturation voltage NPN Epitaxial Amplifier applications-emitter shunt resistors TO-220 compact package Darlington Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix de... See More ⇒

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65 ... See More ⇒

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65 ... See More ⇒

IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related s... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FP B C E Designed for General-Purpose Amplifier and Low-Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 100 V Collector -Emitter Voltage V... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 NPN PNP TO-220 Plastic Package High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION TIP120/125 TIP121/126 TIP122/127 UNIT VCEO Collector Emitter Vol... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 1.BASE TIP127F DARLINGTON TRANSISTOR (PNP) 2.COLLECTOR 3.EMITTER FEATURES 1 2 3 C PNP B Medium Power Complementary Silicon Transistors R 1 R 2 E typ. =5 K typ. =210 R1 R2 TIP127F=Device code Solid dot=Green moldinn compound device, if none,the norm... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTER FEATURES 2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d... See More ⇒

SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=100V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50 L ... See More ⇒

SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=-120V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50 ... See More ⇒

TIP120-TIP127 TO-220 Darlington Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1... See More ⇒

TIP120 Series PNP/NPN Silicon Power Transistor P b Lead(Pb)-Free 1 2 FEATURES 3 * Medium Power Complementary silicon transistors 1. BASE 2. COLLECTOR * TIP120,121,122 Darlington TRANSISTOR (NPN) 3. EMITTER * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220 MAXIMUM RATINGS (TA=25 unless otherwise noted) TIP122 TIP120 TIP121 Parameter Symbol Units TIP125 TIP126 TIP127 ... See More ⇒

Spec. No. HE6713 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temper... See More ⇒

Spec. No. HE6712 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temper... See More ⇒

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES ... See More ⇒

TIP122L(BR3DA122LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features TIP127L(BR3CA127LQ) Complement to TIP127L(BR3CA127LQ). / Applications Medium power linear switching applications. / E... See More ⇒

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features TIP122L(BR3DA122LQ) Complement to TIP122L(BR3DA122LQ). / Applications Medium power linear switching applications. / E... See More ⇒

ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 5 A Collector Current IC 8 A Collector Current (Pulse) ICP 0.12 A Base Current IB... See More ⇒

TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol... See More ⇒

DIP Type Transistors NPN Darlington Transistors TIP122 (KIP122) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=100V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0... See More ⇒

DIP Type Transistors PNP Darlington Transistors TIP126 (KIP126) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-80V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 ... See More ⇒

DIP Type Transistors PNP Darlington Transistors TIP127 (KIP127) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 ... See More ⇒

DIP Type Transistors NPN Darlington Transistors TIP120 (KIP120) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60 V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0... See More ⇒

DIP Type Transistors NPN Darlington Transistors TIP121 (KIP121) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80 V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0... See More ⇒

TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP122F(3DA122F) Features Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V ... See More ⇒

TIP122(3DA122) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP127(3CA127) Features Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I ... See More ⇒

TIP127(3CA127) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP122(3DA122) Features Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO ... See More ⇒

isc Silicon NPN Darlington Power Transistor TIP122 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127 Minimum Lot-to-Lot variations for robust device performance and reliabl... See More ⇒

isc Silicon PNP Darlington Power Transistor TIP126 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP121 Minimum Lot-to-Lot variations for robust device performance and re... See More ⇒

isc Silicon PNP Darlington Power Transistor TIP127 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122 Minimum Lot-to-Lot variations for robust device performance and r... See More ⇒

isc Silicon NPN Darlington Power Transistor TIP122FP DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127FP Minimum Lot-to-Lot variations for robust device performance and rel... See More ⇒

isc Silicon NPN Darlington Power Transistor TIP120 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP125 Minimum Lot-to-Lot variations for robust device performance and reliable... See More ⇒

isc Silicon PNP Darlington Power Transistor TIP127B DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122B Minimum Lot-to-Lot variations for robust device performance and... See More ⇒

isc Silicon NPN Darlington Power Transistor TIP121 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP126 Minimum Lot-to-Lot variations for robust device performance and reliable... See More ⇒