TIP125 - описание и поиск аналогов

TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 3 2 The complement

TIP125/126/127 Medium Power Linear Switching Applications Complementary to TIP120/121/122 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector-Base Voltage TIP125 - 60 V TIP126 - 80 V TIP127 - 100 V B Collector-Emitter Voltag

PNP EPITAXIAL TIP125/126/127 DARLINGTON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP120/121/122 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V TIP125 -80 V TIP126 -120 V TIP127 Collector Emitter Voltage TIP125 VCEO -60 V TIP126 -80 V TIP127 -120 V 1.Base 2.Collector 3.Emitter

MCC Micro Commercial Components TM TIP125/126/127 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Silicon PNP The complementary NPN types are the TIP121/2/3 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy mee

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1.EMITTER 2.COLLECTOR FEATURES 3.BASE Medium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Unit TIP125 TIP1

DIP Type Transistors PNP Darlington Transistors TIP125 (KIP125) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-60V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54

isc Silicon PNP Darlington Power Transistor TIP125 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP120 Minimum Lot-to-Lot variations for robust device performance and re

Order this document MOTOROLA by TIP120/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power NPN TIP120* Complementary Silicon Transistors . . . designed for general purpose amplifier and low speed switching applications. TIP121* High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc TIP122* VCEO(sus) = 60 Vdc (Min)

TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully 3 2 molded isolated package. It is intented for use in 1 pow

TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25 C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage TIP120 60 V TIP121 80 V B TIP122 100 V VCEO Collector-Emitter Voltage

TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Equivalent Circuit Absolute Maximum Ratings TC=25 C unless otherwise noted C Symbol Parameter Value Units VCBO Collector-Base Voltage TIP120 60 V TIP121 80 V B TIP122 100 V VCEO Collector-Emitter Voltage

NPN EPITAXIAL TIP120/121/122 DARLINGTON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V TIP120 80 V TIP121 100 V TIP122 Collector-Emitter Voltage VCEO TIP120 60 V TIP121 80 V TIP122 VEBO 100 V 1.Base 2.Collector 3.Em

MCC TM Micro Commercial Components TIP122 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Darlington configuration in Jedec TO-220 package Transistors The complementary PNP types

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth TIP120 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector-emitter saturation voltage NPN Epitaxial Amplifier applications-emitter shunt resistors TO-220 compact package Darlington Transistors Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix de

UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FP B C E Designed for General-Purpose Amplifier and Low-Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 100 V Collector -Emitter Voltage V

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP120 TIP125 TIP121 TIP126 TIP122 TIP127 NPN PNP TO-220 Plastic Package High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION TIP120/125 TIP121/126 TIP122/127 UNIT VCEO Collector Emitter Vol

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F 1.BASE TIP127F DARLINGTON TRANSISTOR (PNP) 2.COLLECTOR 3.EMITTER FEATURES 1 2 3 C PNP B Medium Power Complementary Silicon Transistors R 1 R 2 E typ. =5 K typ. =210 R1 R2 TIP127F=Device code Solid dot=Green moldinn compound device, if none,the norm

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TIP122 Darlington Transistor (NPN) TO-126 TIP127 Darlington Transistor (PNP) 1. EMITTER FEATURES 2.COLLECTOR Medium Power Complementary Silicon Transistors 3. BASE Equivalent Circuit TIP122 , TIP127=Device code Solid dot = Green molding compound device, if none, the normal d

SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=3V, IC=3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=100V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50 L

SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage VCEO=-120V(Min.) B 15.30 MAX C 0.80 _ + D 3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50

TIP120-TIP127 TO-220 Darlington Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP1

TIP120 Series PNP/NPN Silicon Power Transistor P b Lead(Pb)-Free 1 2 FEATURES 3 * Medium Power Complementary silicon transistors 1. BASE 2. COLLECTOR * TIP120,121,122 Darlington TRANSISTOR (NPN) 3. EMITTER * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220 MAXIMUM RATINGS (TA=25 unless otherwise noted) TIP122 TIP120 TIP121 Parameter Symbol Units TIP125 TIP126 TIP127

Spec. No. HE6713 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temper

Spec. No. HE6712 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/5 HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temper

DARLINGTON COMPLEMENTARY POWER TRANSISTORS R TIP122/TIP127 APPLICATIONS Engine ignition High frequency switching power supply High frequency power transform ly power amplifier circuit FEATURES

TIP122L(BR3DA122LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 NPN Silicon NPN transistor in a TO-126 Plastic Package. / Features TIP127L(BR3CA127LQ) Complement to TIP127L(BR3CA127LQ). / Applications Medium power linear switching applications. / E

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features TIP122L(BR3DA122LQ) Complement to TIP122L(BR3DA122LQ). / Applications Medium power linear switching applications. / E

ST TIP122 NPN Silicon Power Darlington Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 5 A Collector Current IC 8 A Collector Current (Pulse) ICP 0.12 A Base Current IB

TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

DIP Type Transistors NPN Darlington Transistors TIP122 (KIP122) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=100V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0

DIP Type Transistors PNP Darlington Transistors TIP126 (KIP126) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-80V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54

DIP Type Transistors PNP Darlington Transistors TIP127 (KIP127) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=-5A Collector Emitter Voltage VCEO=-100V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54

DIP Type Transistors NPN Darlington Transistors TIP120 (KIP120) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=60 V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0

DIP Type Transistors NPN Darlington Transistors TIP121 (KIP121) TO-220 10.16 0.20 3.18 0.10 2.54 0.20 (0.70) Features (1.00x45 ) Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80 V Medium Power Complementary Silicon Transistors MAX1.47 0.80 0.10 1 2 3 #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0

TIP127F(3CA127F) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP122F(3DA122F) Features Complement to TIP122F(3DA122F). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V

TIP122(3DA122) NPN /SILICON NPN TRANSISTOR Purpose Medium power linear switching applications. TIP127(3CA127) Features Complement to TIP127(3CA127). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 100 V CBO V 100 V CEO V 5.0 V EBO I

TIP127(3CA127) PNP /SILICON PNP TRANSISTOR Purpose Medium power linear switching applications. TIP122(3DA122) Features Complement to TIP122(3DA122). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -100 V CBO V -100 V CEO V -5.0 V EBO

isc Silicon NPN Darlington Power Transistor TIP122 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127 Minimum Lot-to-Lot variations for robust device performance and reliabl

isc Silicon PNP Darlington Power Transistor TIP126 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP121 Minimum Lot-to-Lot variations for robust device performance and re

isc Silicon PNP Darlington Power Transistor TIP127 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122 Minimum Lot-to-Lot variations for robust device performance and r

isc Silicon NPN Darlington Power Transistor TIP122FP DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127FP Minimum Lot-to-Lot variations for robust device performance and rel

isc Silicon NPN Darlington Power Transistor TIP120 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP125 Minimum Lot-to-Lot variations for robust device performance and reliable

isc Silicon PNP Darlington Power Transistor TIP127B DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -3A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.0V(Max)@ I = -3A CE(sat) C = -4.0V(Max)@ I = -5A C Complement to Type TIP122B Minimum Lot-to-Lot variations for robust device performance and

isc Silicon NPN Darlington Power Transistor TIP121 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP126 Minimum Lot-to-Lot variations for robust device performance and reliable