TIP35E Todos los transistores

 ..1. Size:219K  inchange semiconductor
 tip35e.pdf

isc Silicon NPN Power Transistor TIP35E DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 140V(Min) CEO(SUS) Complement to Type TIP36E Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

 9.1. Size:169K  motorola
 tip35rev.pdf

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching applications. TIP35C* PNP 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwi

 9.2. Size:157K  motorola
 tip35are.pdf

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching applications. TIP35C* 25 A Collector Current PNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw

 9.3. Size:192K  st
 tip35cp tip36cp.pdf

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excepti

 9.4. Size:43K  st
 tip35c tip36c tip36b.pdf

TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DI

 9.5. Size:39K  st
 tip35.pdf

TIP35A/35B/35C TIP36A/36B/36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n TIP35B, TIP35C, TIP36B, AND TIP36C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP35A, TIP35B and TIP35C are silicon epitaxial-base NPN transistors in TO-218 plastic 3 package. They are intented for use in power 2 amplifier and switching applications. 1 The complementary PNP types are TIP36A, T

 9.6. Size:190K  st
 tip35cw tip36cw.pdf

TIP35CW TIP36CW Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exc

 9.7. Size:190K  st
 tip35c tip36c.pdf

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excep

 9.8. Size:260K  onsemi
 tip35a tip35b tip35c tip36a tip36b tip36c.pdf

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

 9.9. Size:138K  utc
 tip35c.pdf

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

 9.10. Size:86K  bourns
 tip35-a-b-c.pdf

TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE TIP36 Series (TOP VIEW) 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

 9.11. Size:154K  mospec
 tip35 tip36.pdf

A A A

 9.12. Size:67K  cdil
 tip35f tip36.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO

 9.13. Size:440K  kec
 tip35ca.pdf

SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP36CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax 25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 +

 9.14. Size:289K  kec
 tip35c.pdf

SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax 25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

 9.15. Size:525K  jilin sino
 tip35c.pdf

NPN NPN Epitaxial Silicon Transistor R TIP35C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO Low collector-emitter saturation voltage TIP36C Complementa

 9.16. Size:1293K  cn sps
 tip35ct4tl.pdf

TIP35CT4TL Silicon NPN Power Transistor DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =

 9.17. Size:423K  cn sptech
 tip35c.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor TIP35C DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications

 9.18. Size:219K  inchange semiconductor
 tip35f.pdf

isc Silicon NPN Power Transistor TIP35F DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 160V(Min) CEO(SUS) Complement to Type TIP36F Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

 9.19. Size:219K  inchange semiconductor
 tip35d.pdf

isc Silicon NPN Power Transistor TIP35D DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Complement to Type TIP36D Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

 9.20. Size:222K  inchange semiconductor
 tip35af.pdf

isc Silicon NPN Power Transistor TIP35AF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 9.21. Size:160K  inchange semiconductor
 tip35 tip35a tip35b tip35c.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

 9.22. Size:212K  inchange semiconductor
 tip35ab.pdf

isc Silicon NPN Power Transistor TIP35AB DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 9.23. Size:213K  inchange semiconductor
 tip35at.pdf

isc Silicon NPN Power Transistor TIP35AT DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 9.24. Size:219K  inchange semiconductor
 tip35c.pdf

isc Silicon NPN Power Transistor TIP35C DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

 9.25. Size:225K  inchange semiconductor
 tip35cf.pdf

isc Silicon NPN Power Transistor TIP35CF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36CF Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gen