TIP35E - описание и поиск аналогов

isc Silicon NPN Power Transistor TIP35E DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 140V(Min) CEO(SUS) Complement to Type TIP36E Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching applications. TIP35C* PNP 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwi

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching applications. TIP35C* 25 A Collector Current PNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excepti

TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DI

TIP35A/35B/35C TIP36A/36B/36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n TIP35B, TIP35C, TIP36B, AND TIP36C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP35A, TIP35B and TIP35C are silicon epitaxial-base NPN transistors in TO-218 plastic 3 package. They are intented for use in power 2 amplifier and switching applications. 1 The complementary PNP types are TIP36A, T

TIP35CW TIP36CW Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exc

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show excep

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE TIP36 Series (TOP VIEW) 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO

SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP36CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax 25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 +

SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax 25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

NPN NPN Epitaxial Silicon Transistor R TIP35C APPLICATIONS Audio amplifier General purpose FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO Low collector-emitter saturation voltage TIP36C Complementa

TIP35CT4TL Silicon NPN Power Transistor DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =

SPTECH Product Specification SPTECH Silicon NPN Power Transistor TIP35C DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C APPLICATIONS Designed for use in general purpose power amplifier and switching applications

isc Silicon NPN Power Transistor TIP35F DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 160V(Min) CEO(SUS) Complement to Type TIP36F Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

isc Silicon NPN Power Transistor TIP35D DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) Complement to Type TIP36D Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

isc Silicon NPN Power Transistor TIP35AF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

isc Silicon NPN Power Transistor TIP35AB DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

isc Silicon NPN Power Transistor TIP35AT DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

isc Silicon NPN Power Transistor TIP35C DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36C Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

isc Silicon NPN Power Transistor TIP35CF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Complement to Type TIP36CF Current Gain-Bandwidth Product- f = 3.0MHz(Min)@I = 1.0A T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gen