All Transistors. TIP35E Datasheet

 

TIP35E Datasheet, Equivalent, Cross Reference Search

Type Designator: TIP35E

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO218

TIP35E Transistor Equivalent Substitute - Cross-Reference Search

 

TIP35E Datasheet (PDF)

5.1. tip35cw tip36cw.pdf Size:190K _update

TIP35E
TIP35E

TIP35CW TIP36CW Complementary power transistors . Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 ■ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exc

5.2. tip35are.pdf Size:157K _motorola

TIP35E
TIP35E

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for generalpurpose power amplifier and switching applications. TIP35C* 25 A Collector Current PNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product ?h

 5.3. tip35rev.pdf Size:169K _motorola

TIP35E
TIP35E

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for generalpurpose power amplifier and switching applications. TIP35C* PNP 25 A Collector Current Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product ?hf

5.4. tip35c tip36c.pdf Size:194K _st2

TIP35E
TIP35E

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exceptional high gai

 5.5. tip35.pdf Size:39K _st2

TIP35E
TIP35E

TIP35A/35B/35C TIP36A/36B/36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n TIP35B, TIP35C, TIP36B, AND TIP36C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP35A, TIP35B and TIP35C are silicon epitaxial-base NPN transistors in TO-218 plastic 3 package. They are intented for use in power 2 amplifier and switching applications. 1 The complementary PNP types are TIP36A, TIP3

5.6. tip35,36.pdf Size:43K _st2

TIP35E
TIP35E

TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DIAGRA

5.7. tip35cp tip36cp.pdf Size:196K _st2

TIP35E
TIP35E

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exceptional high gain

5.8. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi

TIP35E
TIP35E

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS

5.9. tip35c.pdf Size:138K _utc

TIP35E
TIP35E

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS ? DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. ? INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Ha

5.10. tip35-a-b-c.pdf Size:86K _bourns

TIP35E
TIP35E

TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ? Designed for Complementary Use with the SOT-93 PACKAGE TIP36 Series (TOP VIEW) ? 125 W at 25C Case Temperature B 1 ? 25 A Continuous Collector Current C 2 ? 40 A Peak Collector Current ? Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings a

5.11. tip35 tip36.pdf Size:154K _mospec

TIP35E
TIP35E

A A A

5.12. tip35f tip36.pdf Size:67K _cdil

TIP35E
TIP35E

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO Co

5.13. tip35ca.pdf Size:440K _kec

TIP35E
TIP35E

SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP36CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax:25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 +

5.14. tip35c.pdf Size:289K _kec

TIP35E
TIP35E

SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax:25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

5.15. tip35d.pdf Size:227K _inchange_semiconductor

TIP35E
TIP35E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor TIP35D DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·Complement to Type TIP36D ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A APPLICATIONS ·Designed for use in general purpose power amplifier and switching

5.16. tip35 35a 35b 35c.pdf Size:160K _inchange_semiconductor

TIP35E
TIP35E

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type TIP36/36A/36B/36C Ў¤ DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Ў¤ Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP35/35A/35B/35

Datasheet: TIP34D , TIP34E , TIP34F , TIP35 , TIP35A , TIP35B , TIP35C , TIP35D , SS8550 , TIP35F , TIP36 , TIP36A , TIP36B , TIP36C , TIP36D , TIP36E , TIP36F .

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