TIP513 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP513

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO59

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TIP513 datasheet

 ..1. Size:212K  inchange semiconductor
 tip513.pdf pdf_icon

TIP513

isc Silicon PNP Power Transistor TIP513 DESCRIPTION Continuous Collector Current-I = -5A C Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Collector Power Dissipation- P = 30W @T 100 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high speed switching applications

 9.1. Size:127K  mospec
 tip51 tip52 tip53 tip54.pdf pdf_icon

TIP513

A A A

 9.2. Size:218K  inchange semiconductor
 tip51.pdf pdf_icon

TIP513

isc Silicon NPN Power Transistors TIP51 DESCRIPTION DC Current Gain -h = 30 150@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS

 9.3. Size:212K  inchange semiconductor
 tip514.pdf pdf_icon

TIP513

isc Silicon PNP Power Transistor TIP514 DESCRIPTION Continuous Collector Current-I = -5A C Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Collector Power Dissipation- P = 20W @T 100 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and high speed switching applications

MOSTRAR MÁS

Otros transistores... TIP506, TIP507, TIP508, TIP509, TIP51, TIP510, TIP511, TIP512, D882, TIP514, TIP515, TIP516, TIP517, TIP518, TIP519, TIP52, TIP520