TIP513
Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP513
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Emitter Voltage |Vce|: 150
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 200
°C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO59
TIP513
Transistor Equivalent Substitute - Cross-Reference Search
TIP513
Datasheet (PDF)
..1. Size:212K inchange semiconductor
tip513.pdf 
isc Silicon PNP Power Transistor TIP513DESCRIPTIONContinuous Collector Current-I = -5ACCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOCollector Power Dissipation-: P = 30W @T 100C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and high speed switchingapplications
9.2. Size:218K inchange semiconductor
tip51.pdf
isc Silicon NPN Power Transistors TIP51DESCRIPTIONDC Current Gain -h = 30~150@ I = 0.3AFE CCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers applications.ABSOLUTE MAXIMUM RATINGS
9.3. Size:212K inchange semiconductor
tip514.pdf
isc Silicon PNP Power Transistor TIP514DESCRIPTIONContinuous Collector Current-I = -5ACCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOCollector Power Dissipation-: P = 20W @T 100C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and high speed switchingapplications
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
