TK28 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source on-resistance RDS(ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (VDS = 500 V) Enhancement mode Vth = 1.5 to 3.0 V (VDS = 10 V,

STK28N3LLH5 N-channel 30 V, 0.0035 , 28 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features RDS(on) VDSS RDS(on)*Qg Type max STK28N3LLH5 30 V

TK28N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK28N65W5 TK28N65W5 TK28N65W5 TK28N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 115 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.11 (typ.) by used to Super Junction Str

TK28N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28N65W TK28N65W TK28N65W TK28N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.094 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

TK28V65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28V65W TK28V65W TK28V65W TK28V65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.099 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enha

TK28E65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28E65W TK28E65W TK28E65W TK28E65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.094 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enha

TK28A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28A65W TK28A65W TK28A65W TK28A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.094 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enha

SEMICONDUCTOR FTK2816E TECHNICAL DATA DESCRIPTION The FTK2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK28E65W ITK28E65W FEATURES Low drain-source on-resistance RDS(on) 0.11 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=1.6mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK28A65W ITK28A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.094 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.6mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS