TK28 Datasheet and Replacement
Type Designator: TK28
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 26 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: X18
TK28 Substitution
TK28 Datasheet (PDF)
ttk2837.pdf

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TTK2837 Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,
stk28n3llh5.pdf

STK28N3LLH5N-channel 30 V, 0.0035 , 28 A, PolarPAKSTripFETV Power MOSFETPreliminary DataFeaturesRDS(on) VDSS RDS(on)*QgTypemaxSTK28N3LLH5 30 V
tk28n65w5.pdf

TK28N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK28N65W5TK28N65W5TK28N65W5TK28N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 115 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.) by used to Super Junction Str
tk28n65w.pdf

TK28N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28N65WTK28N65WTK28N65WTK28N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
Datasheet: TK255A , TK256A , TK257A , TK258A , TK259A , TK25B , TK25C , TK264A , D882 , TK28C , TK30 , TK30D , TK31 , TK31D , TK33 , TK33C , TK34 .
Keywords - TK28 transistor datasheet
TK28 cross reference
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