TK28
Datasheet and Replacement
Type Designator: TK28
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 26
V
Maximum Collector-Emitter Voltage |Vce|: 25
V
Maximum Emitter-Base Voltage |Veb|: 20
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 75
°C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: X18
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TK28
Datasheet (PDF)
0.1. Size:293K 1
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TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TTK2837 Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,
0.2. Size:348K st
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STK28N3LLH5N-channel 30 V, 0.0035 , 28 A, PolarPAKSTripFETV Power MOSFETPreliminary DataFeaturesRDS(on) VDSS RDS(on)*QgTypemaxSTK28N3LLH5 30 V
0.3. Size:249K toshiba
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TK28N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK28N65W5TK28N65W5TK28N65W5TK28N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 115 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.) by used to Super Junction Str
0.4. Size:246K toshiba
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TK28N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28N65WTK28N65WTK28N65WTK28N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
0.5. Size:297K toshiba
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TK28V65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28V65WTK28V65WTK28V65WTK28V65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.099 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha
0.6. Size:307K toshiba
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TK28E65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28E65WTK28E65WTK28E65WTK28E65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha
0.7. Size:293K toshiba
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TK28A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28A65WTK28A65WTK28A65WTK28A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha
0.8. Size:283K first silicon
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SEMICONDUCTORFTK2816ETECHNICAL DATADESCRIPTION The FTK2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)
0.9. Size:246K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK28E65WITK28E65WFEATURESLow drain-source on-resistance:RDS(on) 0.11.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=1.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
0.10. Size:253K inchange semiconductor
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK28A65WITK28A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.094 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
Datasheet: 2N3200
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, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
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, 2N3209
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