TK28 Datasheet. Specs and Replacement
Type Designator: TK28 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 26 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: X18
- BJT ⓘ Cross-Reference Search
TK28 datasheet
0.1. Size:293K 1
ttk2837.pdf 

TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications Unit mm 15.9 MAX. 3.2 0.2 Low drain-source on-resistance RDS(ON) = 0.22 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 10 A (VDS = 500 V) Enhancement mode Vth = 1.5 to 3.0 V (VDS = 10 V,... See More ⇒
0.2. Size:348K st
stk28n3llh5.pdf 

STK28N3LLH5 N-channel 30 V, 0.0035 , 28 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features RDS(on) VDSS RDS(on)*Qg Type max STK28N3LLH5 30 V ... See More ⇒
0.3. Size:249K toshiba
tk28n65w5.pdf 

TK28N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK28N65W5 TK28N65W5 TK28N65W5 TK28N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 115 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.11 (typ.) by used to Super Junction Str... See More ⇒
0.4. Size:246K toshiba
tk28n65w.pdf 

TK28N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28N65W TK28N65W TK28N65W TK28N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.094 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
0.5. Size:297K toshiba
tk28v65w.pdf 

TK28V65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28V65W TK28V65W TK28V65W TK28V65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.099 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enha... See More ⇒
0.6. Size:307K toshiba
tk28e65w.pdf 

TK28E65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28E65W TK28E65W TK28E65W TK28E65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.094 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enha... See More ⇒
0.7. Size:293K toshiba
tk28a65w.pdf 

TK28A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK28A65W TK28A65W TK28A65W TK28A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.094 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enha... See More ⇒
0.8. Size:283K first silicon
ftk2816e.pdf 

SEMICONDUCTOR FTK2816E TECHNICAL DATA DESCRIPTION The FTK2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON) ... See More ⇒
0.9. Size:246K inchange semiconductor
tk28e65w.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK28E65W ITK28E65W FEATURES Low drain-source on-resistance RDS(on) 0.11 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=1.6mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
0.10. Size:253K inchange semiconductor
tk28a65w.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK28A65W ITK28A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.094 (typ.) Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.6mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: TK255A, TK256A, TK257A, TK258A, TK259A, TK25B, TK25C, TK264A, BC337, TK28C, TK30, TK30D, TK31, TK31D, TK33, TK33C, TK34
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