TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TTK2837 Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,

STK28N3LLH5N-channel 30 V, 0.0035 , 28 A, PolarPAKSTripFETV Power MOSFETPreliminary DataFeaturesRDS(on) VDSS RDS(on)*QgTypemaxSTK28N3LLH5 30 V

TK28N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK28N65W5TK28N65W5TK28N65W5TK28N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 115 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.) by used to Super Junction Str

TK28N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28N65WTK28N65WTK28N65WTK28N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

TK28V65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28V65WTK28V65WTK28V65WTK28V65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.099 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha

TK28E65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28E65WTK28E65WTK28E65WTK28E65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha

TK28A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28A65WTK28A65WTK28A65WTK28A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha

SEMICONDUCTORFTK2816ETECHNICAL DATADESCRIPTION The FTK2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK28E65WITK28E65WFEATURESLow drain-source on-resistance:RDS(on) 0.11.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=1.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK28A65WITK28A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.094 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS