Биполярный транзистор TK28
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: TK28
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 26
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 20
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 75
°C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: X18
Аналоги (замена) для TK28
TK28
Datasheet (PDF)
0.1. Size:293K 1
ttk2837.pdf 
TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TTK2837 Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 10 A (VDS = 500 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,
0.2. Size:348K st
stk28n3llh5.pdf 
STK28N3LLH5N-channel 30 V, 0.0035 , 28 A, PolarPAKSTripFETV Power MOSFETPreliminary DataFeaturesRDS(on) VDSS RDS(on)*QgTypemaxSTK28N3LLH5 30 V
0.3. Size:249K toshiba
tk28n65w5.pdf 
TK28N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK28N65W5TK28N65W5TK28N65W5TK28N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 115 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.) by used to Super Junction Str
0.4. Size:246K toshiba
tk28n65w.pdf 
TK28N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28N65WTK28N65WTK28N65WTK28N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
0.5. Size:297K toshiba
tk28v65w.pdf 
TK28V65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28V65WTK28V65WTK28V65WTK28V65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.099 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha
0.6. Size:307K toshiba
tk28e65w.pdf 
TK28E65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28E65WTK28E65WTK28E65WTK28E65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha
0.7. Size:293K toshiba
tk28a65w.pdf 
TK28A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28A65WTK28A65WTK28A65WTK28A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enha
0.8. Size:283K first silicon
ftk2816e.pdf 
SEMICONDUCTORFTK2816ETECHNICAL DATADESCRIPTION The FTK2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)
0.9. Size:246K inchange semiconductor
tk28e65w.pdf 
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK28E65WITK28E65WFEATURESLow drain-source on-resistance:RDS(on) 0.11.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=1.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
0.10. Size:253K inchange semiconductor
tk28a65w.pdf 
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK28A65WITK28A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.094 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.6mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
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