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TK36 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK36
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 16 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: X18
 

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TK36 Datasheet (PDF)

 0.1. Size:425K  first silicon
ftk3620.pdf pdf_icon

TK36

SEMICONDUCTOR FTK3620TECHNICAL DATADESCRIPTION D 1D 2The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2suitable for use as a load switch or in PWM applications. S 1 S 2Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 58 7RDS(ON)

 0.2. Size:211K  first silicon
ftk3615.pdf pdf_icon

TK36

SEMICONDUCTOR FTK3615 TECHNICAL DATADDESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D DGENERAL FEATURES 58 67 VDS = - 30V,ID = -10A 3615RDS(ON)

 0.3. Size:345K  first silicon
ftk3610.pdf pdf_icon

TK36

SEMICONDUCTORFTK3610TECHNICAL DATADDESCRIPTION The FTF3610 uses advanced trench Gtechnology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in SPWM applications. Schematic diagram D D D D6 5GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610RDS(ON)

Otros transistores... TK31 , TK31D , TK33 , TK33C , TK34 , TK34C , TK35 , TK35C , 13003 , TK36C , TK37 , TK37C , TK38 , TK38C , TK40 , TK400A , TK401A .

History: 2SD482 | 2SD1812 | DTC114YEB | BLX27 | DTC114YUA | UMG3N | PDTA115EEF

 

 
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