TK36 Todos los transistores

 

TK36 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK36
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 16 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: X18

 Búsqueda de reemplazo de transistor bipolar TK36

 

TK36 Datasheet (PDF)

 0.1. Size:425K  first silicon
 ftk3620.pdf pdf_icon

TK36

SEMICONDUCTOR FTK3620 TECHNICAL DATA DESCRIPTION D 1 D 2 The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2 suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 5 8 7 RDS(ON)

 0.2. Size:211K  first silicon
 ftk3615.pdf pdf_icon

TK36

SEMICONDUCTOR FTK3615 TECHNICAL DATA D DESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D D GENERAL FEATURES 5 8 6 7 VDS = - 30V,ID = -10A 3615 RDS(ON)

 0.3. Size:345K  first silicon
 ftk3610.pdf pdf_icon

TK36

SEMICONDUCTOR FTK3610 TECHNICAL DATA D DESCRIPTION The FTF3610 uses advanced trench G technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in S PWM applications. Schematic diagram D D D D 6 5 GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610 RDS(ON)

Otros transistores... TK31 , TK31D , TK33 , TK33C , TK34 , TK34C , TK35 , TK35C , 2N3906 , TK36C , TK37 , TK37C , TK38 , TK38C , TK40 , TK400A , TK401A .

History: TIP75 | TIS99 | TK45

 

 
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