TK36 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK36  📄📄 

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 16 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: X18

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TK36 datasheet

 0.1. Size:425K  first silicon
 ftk3620.pdf pdf_icon

TK36

SEMICONDUCTOR FTK3620 TECHNICAL DATA DESCRIPTION D 1 D 2 The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2 suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 5 8 7 RDS(ON)

 0.2. Size:211K  first silicon
 ftk3615.pdf pdf_icon

TK36

SEMICONDUCTOR FTK3615 TECHNICAL DATA D DESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D D GENERAL FEATURES 5 8 6 7 VDS = - 30V,ID = -10A 3615 RDS(ON)

 0.3. Size:345K  first silicon
 ftk3610.pdf pdf_icon

TK36

SEMICONDUCTOR FTK3610 TECHNICAL DATA D DESCRIPTION The FTF3610 uses advanced trench G technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in S PWM applications. Schematic diagram D D D D 6 5 GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610 RDS(ON)

Otros transistores... TK31, TK31D, TK33, TK33C, TK34, TK34C, TK35, TK35C, 2N3906, TK36C, TK37, TK37C, TK38, TK38C, TK40, TK400A, TK401A