TK36 Datasheet. Specs and Replacement
Type Designator: TK36 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 16 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: X18
TK36 Substitution
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TK36 datasheet
SEMICONDUCTOR FTK3620 TECHNICAL DATA DESCRIPTION D 1 D 2 The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2 suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 5 8 7 RDS(ON) ... See More ⇒
SEMICONDUCTOR FTK3615 TECHNICAL DATA D DESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D D GENERAL FEATURES 5 8 6 7 VDS = - 30V,ID = -10A 3615 RDS(ON) ... See More ⇒
SEMICONDUCTOR FTK3610 TECHNICAL DATA D DESCRIPTION The FTF3610 uses advanced trench G technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in S PWM applications. Schematic diagram D D D D 6 5 GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610 RDS(ON) ... See More ⇒
Detailed specifications: TK31, TK31D, TK33, TK33C, TK34, TK34C, TK35, TK35C, 2N3906, TK36C, TK37, TK37C, TK38, TK38C, TK40, TK400A, TK401A
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