TK36 Datasheet and Replacement
Type Designator: TK36
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 16 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: X18
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TK36 Datasheet (PDF)
ftk3620.pdf

SEMICONDUCTOR FTK3620TECHNICAL DATADESCRIPTION D 1D 2The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2suitable for use as a load switch or in PWM applications. S 1 S 2Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 58 7RDS(ON)
ftk3615.pdf

SEMICONDUCTOR FTK3615 TECHNICAL DATADDESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D DGENERAL FEATURES 58 67 VDS = - 30V,ID = -10A 3615RDS(ON)
ftk3610.pdf

SEMICONDUCTORFTK3610TECHNICAL DATADDESCRIPTION The FTF3610 uses advanced trench Gtechnology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in SPWM applications. Schematic diagram D D D D6 5GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610RDS(ON)
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC3712 | 2SA1407E | NB221YX | 2SA1262 | BFQ255 | 2N2872 | T11
Keywords - TK36 transistor datasheet
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History: 2SC3712 | 2SA1407E | NB221YX | 2SA1262 | BFQ255 | 2N2872 | T11



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