TK38 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK38
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 16 V
Tensión colector-emisor (Vce): 10 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 12 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: X18
Búsqueda de reemplazo de transistor bipolar TK38
TK38 Datasheet (PDF)
stk38n3llh5.pdf
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STK38N3LLH5N-channel 30 V, 1.3 m, 38 A, PolarPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max RDS(on)*QgSTK38N3LLH5 30 V 1.55 m 70.9 nC*m Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmarkPolarPAK High avalanche ruggedness Fully encapsulated die 100% Mat
tk380p60y.pdf
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TK380P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P60YTK380P60YTK380P60YTK380P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk380a65y.pdf
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TK380A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A65YTK380A65YTK380A65YTK380A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3)
tk380a60y.pdf
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TK380A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A60YTK380A60YTK380A60YTK380A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk380p65y.pdf
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TK380P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P65YTK380P65YTK380P65YTK380P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
ftk3857l ftk3857t.pdf
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FTK3857T/LSEMICONDUCTORN CHANNEL JUNCTION FIELDTECHNICAL DATAEFFECT TRANSISTORCONDENSER MICROPHONE APPLICATION.EFEATURESBEspecially Suited for Use in Audio, Telephone.Capacitor Microphones.2Excellent Voltage Characteristics.13Excellent Transient Characteristics.DIM MILLIMETERS_A 0 6 +0 05_B 0 8 +0 05_C 0 4 + 0 02MAXIMUM RATING (Ta=25)D 0 27MAX
tk380a65y.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK380A65YITK380A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
tk380a60y.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK380A60YITK380A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38 (typ.)by using Super Junction Structure : DTMOSEasy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable oper
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