TK38 Datasheet. Equivalente

 0.1. Size:846K  st
 stk38n3llh5.pdf

STK38N3LLH5 N-channel 30 V, 1.3 m , 38 A, PolarPAK STripFET V Power MOSFET Features Type VDSS RDS(on) max RDS(on)*Qg STK38N3LLH5 30 V 1.55 m 70.9 nC*m Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark PolarPAK High avalanche ruggedness Fully encapsulated die 100% Mat

 0.2. Size:446K  toshiba
 tk380p60y.pdf

TK380P60Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK380P60Y TK380P60Y TK380P60Y TK380P60Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.29 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 0.3. Size:442K  toshiba
 tk380a65y.pdf

TK380A65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK380A65Y TK380A65Y TK380A65Y TK380A65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.29 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3)

 0.4. Size:443K  toshiba
 tk380a60y.pdf

TK380A60Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK380A60Y TK380A60Y TK380A60Y TK380A60Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.29 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 0.5. Size:446K  toshiba
 tk380p65y.pdf

TK380P65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK380P65Y TK380P65Y TK380P65Y TK380P65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.29 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 0.6. Size:220K  first silicon
 ftk3857l ftk3857t.pdf

FTK3857T/L SEMICONDUCTOR N CHANNEL JUNCTION FIELD TECHNICAL DATA EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. E FEATURES B Especially Suited for Use in Audio, Telephone. Capacitor Microphones. 2 Excellent Voltage Characteristics. 1 3 Excellent Transient Characteristics. DIM MILLIMETERS _ A 0 6 +0 05 _ B 0 8 +0 05 _ C 0 4 + 0 02 MAXIMUM RATING (Ta=25 ) D 0 27MAX

 0.7. Size:253K  inchange semiconductor
 tk380a65y.pdf

 0.8. Size:253K  inchange semiconductor
 tk380a60y.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK380A60Y ITK380A60Y FEATURES Low drain-source on-resistance RDS(ON) = 0.38 (typ.) by using Super Junction Structure DTMOS Easy to control Gate switching Enhancement mode Vth = 3 to 4V (VDS = 10 V, ID=0.36mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable oper