Биполярный транзистор TK38
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: TK38
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 16
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 75
°C
Граничная частота коэффициента передачи тока (ft): 12
MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: X18
Аналоги (замена) для TK38
TK38
Datasheet (PDF)
0.1. Size:846K st
stk38n3llh5.pdf 
STK38N3LLH5N-channel 30 V, 1.3 m, 38 A, PolarPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max RDS(on)*QgSTK38N3LLH5 30 V 1.55 m 70.9 nC*m Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmarkPolarPAK High avalanche ruggedness Fully encapsulated die 100% Mat
0.2. Size:446K toshiba
tk380p60y.pdf 
TK380P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P60YTK380P60YTK380P60YTK380P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
0.3. Size:442K toshiba
tk380a65y.pdf 
TK380A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A65YTK380A65YTK380A65YTK380A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3)
0.4. Size:443K toshiba
tk380a60y.pdf 
TK380A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A60YTK380A60YTK380A60YTK380A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
0.5. Size:446K toshiba
tk380p65y.pdf 
TK380P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P65YTK380P65YTK380P65YTK380P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
0.6. Size:220K first silicon
ftk3857l ftk3857t.pdf 
FTK3857T/LSEMICONDUCTORN CHANNEL JUNCTION FIELDTECHNICAL DATAEFFECT TRANSISTORCONDENSER MICROPHONE APPLICATION.EFEATURESBEspecially Suited for Use in Audio, Telephone.Capacitor Microphones.2Excellent Voltage Characteristics.13Excellent Transient Characteristics.DIM MILLIMETERS_A 0 6 +0 05_B 0 8 +0 05_C 0 4 + 0 02MAXIMUM RATING (Ta=25)D 0 27MAX
0.7. Size:253K inchange semiconductor
tk380a65y.pdf 
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK380A65YITK380A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
0.8. Size:253K inchange semiconductor
tk380a60y.pdf 
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK380A60YITK380A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38 (typ.)by using Super Junction Structure : DTMOSEasy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable oper
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