TK38
Datasheet, Equivalent, Cross Reference Search
Type Designator: TK38
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 16
V
Maximum Collector-Emitter Voltage |Vce|: 10
V
Maximum Emitter-Base Voltage |Veb|: 12
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 75
°C
Transition Frequency (ft): 12
MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: X18
TK38
Transistor Equivalent Substitute - Cross-Reference Search
TK38
Datasheet (PDF)
0.1. Size:846K st
stk38n3llh5.pdf 
STK38N3LLH5N-channel 30 V, 1.3 m, 38 A, PolarPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max RDS(on)*QgSTK38N3LLH5 30 V 1.55 m 70.9 nC*m Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmarkPolarPAK High avalanche ruggedness Fully encapsulated die 100% Mat
0.2. Size:446K toshiba
tk380p60y.pdf
TK380P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P60YTK380P60YTK380P60YTK380P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
0.3. Size:442K toshiba
tk380a65y.pdf
TK380A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A65YTK380A65YTK380A65YTK380A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3)
0.4. Size:443K toshiba
tk380a60y.pdf
TK380A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK380A60YTK380A60YTK380A60YTK380A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
0.5. Size:446K toshiba
tk380p65y.pdf
TK380P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK380P65YTK380P65YTK380P65YTK380P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.29 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
0.6. Size:220K first silicon
ftk3857l ftk3857t.pdf
FTK3857T/LSEMICONDUCTORN CHANNEL JUNCTION FIELDTECHNICAL DATAEFFECT TRANSISTORCONDENSER MICROPHONE APPLICATION.EFEATURESBEspecially Suited for Use in Audio, Telephone.Capacitor Microphones.2Excellent Voltage Characteristics.13Excellent Transient Characteristics.DIM MILLIMETERS_A 0 6 +0 05_B 0 8 +0 05_C 0 4 + 0 02MAXIMUM RATING (Ta=25)D 0 27MAX
0.7. Size:253K inchange semiconductor
tk380a65y.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK380A65YITK380A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
0.8. Size:253K inchange semiconductor
tk380a60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK380A60YITK380A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.38 (typ.)by using Super Junction Structure : DTMOSEasy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.36mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable oper
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