TK42 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK42 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 30 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Ganancia de corriente contínua (hFE): 45
Encapsulados: X18
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TK42 datasheet
tk42a12n1.pdf
TK42A12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK42A12N1 TK42A12N1 TK42A12N1 TK42A12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 7.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha
tk42e12n1.pdf
TK42E12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK42E12N1 TK42E12N1 TK42E12N1 TK42E12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 7.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha
wtk4224.pdf
WTK4224 Surface Mount Dual N-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free 10 AMPERES DRAIN SOURCE VOLTAGE Features 30 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)
wtk4228.pdf
WTK4228 Surface Mount Dual N-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free 6.8 AMPERES DRAIN SOURCE VOLTAGE Features 30 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)
Otros transistores... TK400A, TK401A, TK402A, TK403A, TK40A, TK40C, TK41, TK41C, BD335, TK42C, TK44C, TK45, TK45C, TK46, TK46C, TK47, TK47C
History: TN5551 | ADY32
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