TK42 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK42A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK42A12N1TK42A12N1TK42A12N1TK42A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

TK42E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK42E12N1TK42E12N1TK42E12N1TK42E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha

WTK4224Surface Mount Dual N-ChannelEnhancement Mode MOSFETDRAIN CURRENTP b Lead(Pb)-Free10 AMPERESDRAIN SOURCE VOLTAGEFeatures:30 VOLTAGE*Super high dense cell design for low RDS(ON)RDS(ON)

WTK4228Surface Mount Dual N-ChannelEnhancement Mode MOSFETDRAIN CURRENTP b Lead(Pb)-Free6.8 AMPERESDRAIN SOURCE VOLTAGEFeatures:30 VOLTAGE*Super high dense cell design for low RDS(ON)RDS(ON)

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK42A12N1ITK42A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 9.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI