TK42 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK42A12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK42A12N1 TK42A12N1 TK42A12N1 TK42A12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 7.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha

TK42E12N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK42E12N1 TK42E12N1 TK42E12N1 TK42E12N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 7.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 120 V) (3) Enha

WTK4224 Surface Mount Dual N-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free 10 AMPERES DRAIN SOURCE VOLTAGE Features 30 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)

WTK4228 Surface Mount Dual N-Channel Enhancement Mode MOSFET DRAIN CURRENT P b Lead(Pb)-Free 6.8 AMPERES DRAIN SOURCE VOLTAGE Features 30 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK42A12N1 ITK42A12N1 FEATURES Low drain-source on-resistance RDS(ON) = 9.4m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI