TK42
Datasheet, Equivalent, Cross Reference Search
Type Designator: TK42
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 40
V
Maximum Collector-Emitter Voltage |Vce|: 15
V
Maximum Emitter-Base Voltage |Veb|: 30
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 75
°C
Transition Frequency (ft): 1
MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: X18
TK42
Transistor Equivalent Substitute - Cross-Reference Search
TK42
Datasheet (PDF)
0.1. Size:233K toshiba
tk42a12n1.pdf 
TK42A12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK42A12N1TK42A12N1TK42A12N1TK42A12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha
0.2. Size:245K toshiba
tk42e12n1.pdf
TK42E12N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK42E12N1TK42E12N1TK42E12N1TK42E12N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 7.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 120 V)(3) Enha
0.3. Size:711K wietron
wtk4224.pdf
WTK4224Surface Mount Dual N-ChannelEnhancement Mode MOSFETDRAIN CURRENTP b Lead(Pb)-Free10 AMPERESDRAIN SOURCE VOLTAGEFeatures:30 VOLTAGE*Super high dense cell design for low RDS(ON)RDS(ON)
0.4. Size:556K wietron
wtk4228.pdf
WTK4228Surface Mount Dual N-ChannelEnhancement Mode MOSFETDRAIN CURRENTP b Lead(Pb)-Free6.8 AMPERESDRAIN SOURCE VOLTAGEFeatures:30 VOLTAGE*Super high dense cell design for low RDS(ON)RDS(ON)
0.5. Size:252K inchange semiconductor
tk42a12n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK42A12N1ITK42A12N1FEATURESLow drain-source on-resistance:RDS(ON) = 9.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI
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