TK46 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK46E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK46E08N1 TK46E08N1 TK46E08N1 TK46E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan

TK46A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK46A08N1 TK46A08N1 TK46A08N1 TK46A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan

Preliminary Technical Information IXTK46N50L VDSS = 500 V Linear Power MOSFET IXTX46N50L ID25 = 46 A With Extended FBSOA RDS(on) 0.16 N-Channel Enhancement Mode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G D VGS Continuous 30 V S (TAB) VGSM Transient

SEMICONDUCTOR FTK4604 TECHNICAL DATA DESCRIPTION The FTK4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 N-Channel 6 5 8 7 VDS = 30V,ID = 6.9A RDS(ON)

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK46A08N1 ITK46A08N1 FEATURES Low drain-source on-resistance RDS(ON) = 8.4m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXI