TK46 Datasheet, Equivalent, Cross Reference Search
Type Designator: TK46
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: X18
TK46 Transistor Equivalent Substitute - Cross-Reference Search
TK46 Datasheet (PDF)
tk46e08n1.pdf
TK46E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK46E08N1TK46E08N1TK46E08N1TK46E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan
tk46a08n1.pdf
TK46A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK46A08N1TK46A08N1TK46A08N1TK46A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 6.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3) Enhan
ixtk46n50l ixtx46n50l.pdf
Preliminary Technical InformationIXTK46N50L VDSS = 500 VLinear Power MOSFETIXTX46N50L ID25 = 46 AWith Extended FBSOA RDS(on) 0.16 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGDVGS Continuous 30 VS(TAB)VGSM Transient
ftk4604.pdf
SEMICONDUCTOR FTK4604TECHNICAL DATADESCRIPTION The FTK4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2N-Channel 6 58 7VDS = 30V,ID = 6.9A RDS(ON)
tk46a08n1.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK46A08N1ITK46A08N1FEATURESLow drain-source on-resistance:RDS(ON) = 8.4m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
