TK46 Datasheet. Specs and Replacement

Type Designator: TK46  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 0.4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: X18

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TK46 datasheet

 0.1. Size:249K  toshiba

 tk46e08n1.pdf pdf_icon

TK46

TK46E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK46E08N1 TK46E08N1 TK46E08N1 TK46E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan... See More ⇒

 0.2. Size:235K  toshiba

 tk46a08n1.pdf pdf_icon

TK46

TK46A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK46A08N1 TK46A08N1 TK46A08N1 TK46A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 6.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3) Enhan... See More ⇒

 0.3. Size:117K  ixys

 ixtk46n50l ixtx46n50l.pdf pdf_icon

TK46

Preliminary Technical Information IXTK46N50L VDSS = 500 V Linear Power MOSFET IXTX46N50L ID25 = 46 A With Extended FBSOA RDS(on) 0.16 N-Channel Enhancement Mode TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G D VGS Continuous 30 V S (TAB) VGSM Transient ... See More ⇒

 0.4. Size:428K  first silicon

 ftk4604.pdf pdf_icon

TK46

SEMICONDUCTOR FTK4604 TECHNICAL DATA DESCRIPTION The FTK4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 N-Channel 6 5 8 7 VDS = 30V,ID = 6.9A RDS(ON) ... See More ⇒

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Detailed specifications: TK40C, TK41, TK41C, TK42, TK42C, TK44C, TK45, TK45C, TIP35C, TK46C, TK47, TK47C, TK48C, TK49C, TK70, TK70A, TK71

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