TN3444 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TN3444
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO237
Búsqueda de reemplazo de TN3444
TN3444 Datasheet (PDF)
tn3440a.pdf

TN3440ATO-226CBENPN General Purpose AmplifierThis device is designed for use in horizontal driver, class A off-line amplifierand off-line switching applications. Sourced from Process 36.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 250 VVCBO Collector-Base Voltage 300 VVEBO Emitter-Base Voltage 7.0 V
mtn3440n6.pdf

Spec. No. : C874N6 Issued Date : 2013.07.10 CYStech Electronics Corp.Revised Date : 2017.03.29 Page No. : 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150VMTN3440N6 ID@VGS=10V, TA=25C 1.7A ID@VGS=10V, TA=70C 1.4A ID@VGS=10V, TC=25C 2.2A ID@VGS=10V, TC=70C 1.8A Features245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=
stn3446.pdf

STN3446STN3446STN3446STN3446N Channel Enhancement Mode MOSFET5.3ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN3446 is the N-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance. These devices are particularlysuited fo
Otros transistores... TN3402 , TN3403 , TN3404 , TN3405 , TN3414 , TN3415 , TN3416 , TN3417 , 8050 , TN3467 , TN3563 , TN3564 , TN3565 , TN3566 , TN3567 , TN3568 , TN3569 .
History: MGT108G | BCW60DLT1 | 2SC3508 | TK70A | FPN560 | AC508 | 3DG639
History: MGT108G | BCW60DLT1 | 2SC3508 | TK70A | FPN560 | AC508 | 3DG639



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