TN3444 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TN3444  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO237

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TN3444 datasheet

 9.1. Size:444K  fairchild semi
 tn3440a.pdf pdf_icon

TN3444

TN3440A TO-226 C B E NPN General Purpose Amplifier This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 250 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 7.0 V

 9.2. Size:421K  cystek
 mtn3440n6.pdf pdf_icon

TN3444

Spec. No. C874N6 Issued Date 2013.07.10 CYStech Electronics Corp. Revised Date 2017.03.29 Page No. 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150V MTN3440N6 ID@VGS=10V, TA=25 C 1.7A ID@VGS=10V, TA=70 C 1.4A ID@VGS=10V, TC=25 C 2.2A ID@VGS=10V, TC=70 C 1.8A Features 245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=

 9.3. Size:320K  stansontech
 stn3446.pdf pdf_icon

TN3444

STN3446 STN3446 STN3446 STN3446 N Channel Enhancement Mode MOSFET 5.3A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STN3446 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited fo

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