TN3444 Datasheet. Specs and Replacement
Type Designator: TN3444 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO237
TN3444 Substitution
- BJT ⓘ Cross-Reference Search
TN3444 datasheet
TN3440A TO-226 C B E NPN General Purpose Amplifier This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 250 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage 7.0 V... See More ⇒
Spec. No. C874N6 Issued Date 2013.07.10 CYStech Electronics Corp. Revised Date 2017.03.29 Page No. 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150V MTN3440N6 ID@VGS=10V, TA=25 C 1.7A ID@VGS=10V, TA=70 C 1.4A ID@VGS=10V, TC=25 C 2.2A ID@VGS=10V, TC=70 C 1.8A Features 245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=... See More ⇒
STN3446 STN3446 STN3446 STN3446 N Channel Enhancement Mode MOSFET 5.3A DESCRIPTION DESCRIPTION DESCRIPTION DESCRIPTION The STN3446 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited fo... See More ⇒
Detailed specifications: TN3402, TN3403, TN3404, TN3405, TN3414, TN3415, TN3416, TN3417, BC546, TN3467, TN3563, TN3564, TN3565, TN3566, TN3567, TN3568, TN3569
Keywords - TN3444 pdf specs
TN3444 cross reference
TN3444 equivalent finder
TN3444 pdf lookup
TN3444 substitution
TN3444 replacement
