TN3444 Datasheet, Equivalent, Cross Reference Search
Type Designator: TN3444
Material of Transistor: Si
Polarity: NPN
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO237
TN3444 Transistor Equivalent Substitute - Cross-Reference Search
TN3444 Datasheet (PDF)
tn3440a.pdf
TN3440ATO-226CBENPN General Purpose AmplifierThis device is designed for use in horizontal driver, class A off-line amplifierand off-line switching applications. Sourced from Process 36.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 250 VVCBO Collector-Base Voltage 300 VVEBO Emitter-Base Voltage 7.0 V
mtn3440n6.pdf
Spec. No. : C874N6 Issued Date : 2013.07.10 CYStech Electronics Corp.Revised Date : 2017.03.29 Page No. : 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150VMTN3440N6 ID@VGS=10V, TA=25C 1.7A ID@VGS=10V, TA=70C 1.4A ID@VGS=10V, TC=25C 2.2A ID@VGS=10V, TC=70C 1.8A Features245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=
stn3446.pdf
STN3446STN3446STN3446STN3446N Channel Enhancement Mode MOSFET5.3ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN3446 is the N-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance. These devices are particularlysuited fo
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
