TN3440ATO-226CBENPN General Purpose AmplifierThis device is designed for use in horizontal driver, class A off-line amplifierand off-line switching applications. Sourced from Process 36.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 250 VVCBO Collector-Base Voltage 300 VVEBO Emitter-Base Voltage 7.0 V

Spec. No. : C874N6 Issued Date : 2013.07.10 CYStech Electronics Corp.Revised Date : 2017.03.29 Page No. : 1/9 N-Channel Enhancement Mode MOSFET BVDSS 150VMTN3440N6 ID@VGS=10V, TA=25C 1.7A ID@VGS=10V, TA=70C 1.4A ID@VGS=10V, TC=25C 2.2A ID@VGS=10V, TC=70C 1.8A Features245m VGS=10V, ID=1.5A Simple drive requirement RDSON(TYP) 270m VGS=

STN3446STN3446STN3446STN3446N Channel Enhancement Mode MOSFET5.3ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STN3446 is the N-Channel enhancement mode power field effect transistor whichis produced using high cell density, DMOS trench technology. This high density processis especially tailored to minimize on-state resistance. These devices are particularlysuited fo