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TP3053 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TP3053
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar TP3053

 

TP3053 Datasheet (PDF)

 9.1. Size:161K  motorola
mtp3055vlrev2a.pdf

TP3053
TP3053

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 9.2. Size:144K  motorola
mtp3055vl.pdf

TP3053
TP3053

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055VL/DDesigner's Data SheetMTP3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-12 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTS

 9.3. Size:160K  motorola
mtp3055vrev2a.pdf

TP3053
TP3053

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS

 9.4. Size:142K  motorola
mtp3055v.pdf

TP3053
TP3053

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP3055V/DDesigner's Data SheetMTP3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis- 12 AMPEREStance area product about onehalf that of standard MOSFETs. This 60 VOLTS

 9.5. Size:452K  st
mtp3055a-afi.pdf

TP3053
TP3053

 9.6. Size:294K  st
mtp3055e.pdf

TP3053
TP3053

MTP3055EN-CHANNEL 60V - 0.1 - 12ATO-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDMTP3055E 60 V

 9.7. Size:42K  fairchild semi
mtp3055vl.pdf

TP3053
TP3053

June 2000DISTRIBUTION GROUP*MTP3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 VThis N-Channel Logic Level MOSFET has been designedspecifically for low voltage, high speed switching Critical DC electrical parameters specified at elevatedapplications i.e. power supplies and power mo

 9.8. Size:202K  onsemi
mtp3055v.pdf

TP3053
TP3053

MTP3055VPreferred DevicePower MOSFET12 Amps, 60 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highhttp://onsemi.comspeed switching applications in power supplies, converters and powermotor controls, these devices are particularly well suited for bridge12 AMPEREScircuits where dio

 9.9. Size:658K  stansontech
stp3052d.pdf

TP3053
TP3053

STP3052D P Channel Enhancement Mode MOSFET -25.0A DESCRIPTION STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Such as DC/DC converter

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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History: 2N1831 | 2N1640

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