TP3053 datasheet и подбор замены

 9.1. Size:161K  motorola
 mtp3055vlrev2a.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.2. Size:144K  motorola
 mtp3055vl.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055VL/D Designer's Data Sheet MTP3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.3. Size:160K  motorola
 mtp3055vrev2a.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.4. Size:142K  motorola
 mtp3055v.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3055V/D Designer's Data Sheet MTP3055V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 12 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS

 9.5. Size:452K  st
 mtp3055a-afi.pdf 

 9.6. Size:294K  st
 mtp3055e.pdf 

MTP3055E N-CHANNEL 60V - 0.1 - 12ATO-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID MTP3055E 60 V

 9.7. Size:42K  fairchild semi
 mtp3055vl.pdf 

June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 12 A, 60 V. RDS(ON) = 0.18 @ VGS = 5 V This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching Critical DC electrical parameters specified at elevated applications i.e. power supplies and power mo

 9.8. Size:202K  onsemi
 mtp3055v.pdf 

MTP3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 12 AMPERES circuits where dio

 9.9. Size:658K  stansontech
 stp3052d.pdf 

STP3052D P Channel Enhancement Mode MOSFET -25.0A DESCRIPTION STP3052D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Such as DC/DC converter