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TP4403 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TP4403
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.31 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 9 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92

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TP4403 Datasheet (PDF)

 0.1. Size:621K  cystek
mtp4403sq8.pdf

TP4403
TP4403

Spec. No. : C804Q8 Issued Date : 2009.12.16 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20VMTP4403SQ8 RDSON(MAX) 46m ID -6.1ADescription The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan

 0.2. Size:622K  cystek
mtp4403q8.pdf

TP4403
TP4403

Spec. No. : C791Q8 Issued Date : 2010.07.16 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTP4403Q8 RDSON(MAX) 50m ID -6.1ADescription The MTP4403Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 0.3. Size:253K  stansontech
stp4403.pdf

TP4403
TP4403

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n

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