TP4403 Datasheet. Specs and Replacement
Type Designator: TP4403 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
TP4403 Substitution
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TP4403 datasheet
Spec. No. C804Q8 Issued Date 2009.12.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP4403SQ8 RDSON(MAX) 46m ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan... See More ⇒
Spec. No. C791Q8 Issued Date 2010.07.16 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4403Q8 RDSON(MAX) 50m ID -6.1A Description The MTP4403Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒
STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n... See More ⇒
Detailed specifications: TP4258, TP4258A, TP4274, TP4275, TP4354, TP4355, TP4356, TP4401, S9014, TP4888, TP4889, TP4890, TP4916, TP4917, TP4964, TP4965, TP5127
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History: 2SC4135S
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