UMB10N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMB10N
Código: B10
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SC-88
Búsqueda de reemplazo de transistor bipolar UMB10N
UMB10N Datasheet (PDF)
umb10n imb10a b10 sot23-6 sot363.pdf
Transistors General purpose (dual digital transistors) UMB10N / IMB10A FFeatures FExternal dimensions (Units mm) 1) Two DTA123J chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type PNP
emb10 umb10n imb10a umb10n.pdf
EMB10 / UMB10N / IMB10A Transistors General purpose (dual digital transistors) EMB10 / UMB10N / IMB10A Dimensions (Unit mm) Features 1) Two DTA123J chips in a EMT or UMT or SMT EMB10 package. (6) (5) (4) 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3) interference. Each l
umb10nfha.pdf
EMB10 / UMB10N / IMB10A EMB10FHA / UMB10NFHA / IMB10AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) (2) IC(MAX.) -100mA (3) (3) R1 2.2kW EMB10 UMB10N EMB10FHA UMB10NFHA R2 47kW (SC-107C) SOT-353 (
emb10fha umb10nfha imb10afra.pdf
EMB10 / UMB10N / IMB10A EMB10FHA / UMB10NFHA / IMB10AFRA Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCC -50V (4) (4) (1) (1) (2) (2) IC(MAX.) -100mA (3) (3) R1 2.2kW EMB10 UMB10N EMB10FHA UMB10NFHA R2 47kW (SC-107C) SOT-353 (
Otros transistores... UMA2N , UMA3N , UMA4N , UMA5N , UMA6N , UMA7N , UMA8N , UMA9N , S9014 , UMB11N , UMB16N , UMB1N , UMB2N , UMB3N , UMB4N , UMB5N , UMB6N .
History: RN4985FS | 2SC6026MFV-GR
History: RN4985FS | 2SC6026MFV-GR
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