UMB3N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UMB3N 📄📄

Código: B3

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SC-88

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UMB3N datasheet

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emb3 umb3n imb3a umb3n.pdf pdf_icon

EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A External dimensions (Unit mm) Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 EMB3 1.6 0.5 package. 1.0 0.5 0.5 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4) automatic mounting machines. 1pin mark ( ) ( ) ( ) 1 2 3 3) Transistor elements are indep

..2. Size:50K rohm
umb3n imb3a b3 sot363 sot23-6.pdf pdf_icon

Transistors General purpose (dual digital transistors) UMB3N / IMB3A FFeatures FExternal dimensions (Units mm) 1) Two DTA143T chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. FStructure Dual PNP digital transistor (each with single built in resistor) The follow

..3. Size:502K htsemi
umb3n.pdf pdf_icon

UMB3N General purpose transistors (dual transistors) SOT-363 FEATURES Two DTA143T chips in a package 1 Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking B3 Equivalent circuit Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Collec

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emb3fha umb3nfha imb3afra.pdf pdf_icon

EMB3FHA / UMB3NFHA / IMB3AFRA EMB3 / UMB3N / IMB3A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCEO -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 4.7kW EMB3 UMB3N EMB3FHA UMB3NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4)

Otros transistores... UMA7N, UMA8N, UMA9N, UMB10N, UMB11N, UMB16N, UMB1N, UMB2N, MJE340, UMB4N, UMB5N, UMB6N, MMUN2235LT1G, UMB8N, UMB9N, UMC1N, UMC2N

UMB3N Datasheet. Equivalente