UMB3N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A External dimensions (Unit mm) Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 EMB3 1.6 0.5 package. 1.0 0.5 0.5 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4) automatic mounting machines. 1pin mark ( ) ( ) ( ) 1 2 3 3) Transistor elements are indep

Transistors General purpose (dual digital transistors) UMB3N / IMB3A FFeatures FExternal dimensions (Units mm) 1) Two DTA143T chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. FStructure Dual PNP digital transistor (each with single built in resistor) The follow

UMB3N General purpose transistors (dual transistors) SOT-363 FEATURES Two DTA143T chips in a package 1 Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking B3 Equivalent circuit Absolute maximum ratings(Ta=25 ) Parameter Symbol Limits Unit Collec

EMB3FHA / UMB3NFHA / IMB3AFRA EMB3 / UMB3N / IMB3A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCEO -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 4.7kW EMB3 UMB3N EMB3FHA UMB3NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4)

EMB3FHA / UMB3NFHA / IMB3AFRA EMB3 / UMB3N / IMB3A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCEO -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 4.7kW EMB3 UMB3N EMB3FHA UMB3NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4)