UMB3N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UMB3N
   Código: B3
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SC-88

Búsqueda de reemplazo de transistor bipolar UMB3N

UMB3N Datasheet (PDF)

..1. Size:64K rohm
emb3 umb3n imb3a umb3n.pdf

EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A External dimensions (Unit : mm) Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 EMB31.60.5package. 1.00.5 0.52) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 1pin mark ( ) ( ) ( )1 2 33) Transistor elements are indep

..2. Size:50K rohm
umb3n imb3a b3 sot363 sot23-6.pdf

TransistorsGeneral purpose(dual digital transistors)UMB3N / IMB3AFFeatures FExternal dimensions (Units: mm)1) Two DTA143T chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.FStructureDual PNP digital transistor(each with single built in resistor)The follow

..3. Size:502K htsemi
umb3n.pdf

UMB3N General purpose transistors (dual transistors)SOT-363 FEATURES Two DTA143T chips in a package 1 Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. Marking: B3 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitCollec

0.1. Size:1266K rohm
emb3fha umb3nfha imb3afra.pdf

EMB3FHA / UMB3NFHA / IMB3AFRAEMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N EMB3FHA UMB3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)

0.2. Size:1226K rohm
umb3nfha.pdf