UMD10N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMD10N
Código: D10
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT363
UMD10N Datasheet (PDF)
umd10n.pdf

M CCTMMicro Commercial ComponentsUMD10NMicro Commercial Components20736 Marilla Street ChatsworthCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Both the DTC123J chip and DTA123J chip in a package Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Digital Transistors Halog
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DISCRETE SEMICONDUCTORS DATA SHEETPEMD10; PUMD10NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2004 Apr 15Supersedes data of 2003 Nov 04 NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD10; PUMD10R1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. M
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMD10NPN/PNP resistor-equippedtransistors1999 May 20Product specificationSupersedes data of 1998 Dec 04Philips Semiconductors Product specificationNPN/PNP resistor-equipped transistors PUMD10FEATURES Transistors with different polarity and built-in biasresistors R1 and R2 (typ. 2.2 k and 47 krespective
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