UMD10N Datasheet, Equivalent, Cross Reference Search
Type Designator: UMD10N
SMD Transistor Code: D10
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT363
UMD10N Transistor Equivalent Substitute - Cross-Reference Search
UMD10N Datasheet (PDF)
umd10n.pdf
M CCTMMicro Commercial ComponentsUMD10NMicro Commercial Components20736 Marilla Street ChatsworthCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Both the DTC123J chip and DTA123J chip in a package Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Digital Transistors Halog
pemd10 pumd10.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMD10; PUMD10NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2004 Apr 15Supersedes data of 2003 Nov 04 NXP Semiconductors Product data sheetNPN/PNP resistor-equipped transistors; PEMD10; PUMD10R1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. M
pumd10 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMD10NPN/PNP resistor-equippedtransistors1999 May 20Product specificationSupersedes data of 1998 Dec 04Philips Semiconductors Product specificationNPN/PNP resistor-equipped transistors PUMD10FEATURES Transistors with different polarity and built-in biasresistors R1 and R2 (typ. 2.2 k and 47 krespective
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
