UMG8N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMG8N
Código: G8
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SC88A SOT353
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UMG8N Datasheet (PDF)
umg8n.pdf

TransistorsEmitter common (dual digital transistors)UMG8N / FMG8AFFeatures FExternal dimensions (Units: mm)1) Two DTC143T chips in a UMT orSMT package.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)
umg8n fmg8a g2 sot23-5 sot353.pdf

TransistorsEmitter common (dual digital transistors)UMG8N / FMG8AFFeatures FExternal dimensions (Units: mm)1) Two DTC143T chips in a UMT orSMT package.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)
emg8 umg8n fmg8a.pdf

EMG8 / UMG8N / FMG8ATransistorsEmitter common(dual digital transistors)EMG8 / UMG8N / FMG8A Features External dimensions (Units : mm)1) Two DTC143Z chips in a EMT or UMT or SMTEMG8package.2) Mounting cost and area can be cut in half.(4) (3)(2)(5) (1)1.21.6 StructureEach lead has same dimensionsEpitaxial planar typeROHM : EMT5NPN silicon transistorAbbrevia
Otros transistores... PDTA123EK , PDTA123ES , UMG1N , UMG2N , UMG3N , UMG4N , UMG5N , UMG6N , D965 , UMG9N , UMH10N , UMH11N , UMH1N , UMH2N , UMH3N , UMH4N , UMH5N .



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