UMG8N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMG8N
Código: G8
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SC88A SOT353
Búsqueda de reemplazo de transistor bipolar UMG8N
UMG8N Datasheet (PDF)
umg8n.pdf
TransistorsEmitter common (dual digital transistors)UMG8N / FMG8AFFeatures FExternal dimensions (Units: mm)1) Two DTC143T chips in a UMT orSMT package.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)
umg8n fmg8a g2 sot23-5 sot353.pdf
TransistorsEmitter common (dual digital transistors)UMG8N / FMG8AFFeatures FExternal dimensions (Units: mm)1) Two DTC143T chips in a UMT orSMT package.2) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN silicon transistor(Built-in resistor type)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta = 25_C)
emg8 umg8n fmg8a.pdf
EMG8 / UMG8N / FMG8ATransistorsEmitter common(dual digital transistors)EMG8 / UMG8N / FMG8A Features External dimensions (Units : mm)1) Two DTC143Z chips in a EMT or UMT or SMTEMG8package.2) Mounting cost and area can be cut in half.(4) (3)(2)(5) (1)1.21.6 StructureEach lead has same dimensionsEpitaxial planar typeROHM : EMT5NPN silicon transistorAbbrevia
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BD515-1
History: BD515-1
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Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050